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2SK2687-01 - 

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID +/-50A; TO-220; PD 60W; VGS +/

Fuji Semiconductor 2SK2687-01
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商產(chǎn)品編號:
2SK2687-01
倉庫庫存編號:
70212519
技術(shù)數(shù)據(jù)表:
View 2SK2687-01 Datasheet Datasheet
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由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!

2SK2687-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
  • 2SK2687-01產(chǎn)品信息

      Application  For switching  
      Capacitance, Input  2750 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±50 A  
      Current, Drain, Pulse  ±200  
      Dimensions  10 x 4.5 x 15 mm  
      Height  0.591" (15mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  60 W  
      Resistance, Drain to Source On  17 mΩ  
      Resistance, Thermal, Junction to Case  2.08 °C?W (Max.)  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  75 °C⁄W  
      Time, Turn-Off Delay  180 ns  
      Time, Turn-On Delay  13 ns  
      Voltage, Breakdown, Drain to Source  30 V  
      Voltage, Drain to Source  30 V  
      Voltage, Forward, Diode  1.14 V  
      Voltage, Gate to Source  ±16 V  
      Width  0.177" (4.5mm)  
    關(guān)鍵詞         

    2SK2687-01相關(guān)搜索

    Application For switching  Fuji Semiconductor Application For switching  MOSFET Transistors Application For switching  Fuji Semiconductor MOSFET Transistors Application For switching   Capacitance, Input 2750 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2750 pF @ 25 V  MOSFET Transistors Capacitance, Input 2750 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2750 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±50 A  Fuji Semiconductor Current, Drain ±50 A  MOSFET Transistors Current, Drain ±50 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±50 A   Current, Drain, Pulse ±200  Fuji Semiconductor Current, Drain, Pulse ±200  MOSFET Transistors Current, Drain, Pulse ±200  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse ±200   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature 150 °C  Fuji Semiconductor Operating and Storage Temperature 150 °C  MOSFET Transistors Operating and Storage Temperature 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 60 W  Fuji Semiconductor Power Dissipation 60 W  MOSFET Transistors Power Dissipation 60 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 60 W   Resistance, Drain to Source On 17 mΩ  Fuji Semiconductor Resistance, Drain to Source On 17 mΩ  MOSFET Transistors Resistance, Drain to Source On 17 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 17 mΩ   Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 75 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W   Time, Turn-Off Delay 180 ns  Fuji Semiconductor Time, Turn-Off Delay 180 ns  MOSFET Transistors Time, Turn-Off Delay 180 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 180 ns   Time, Turn-On Delay 13 ns  Fuji Semiconductor Time, Turn-On Delay 13 ns  MOSFET Transistors Time, Turn-On Delay 13 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 13 ns   Voltage, Breakdown, Drain to Source 30 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Fuji Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.14 V  Fuji Semiconductor Voltage, Forward, Diode 1.14 V  MOSFET Transistors Voltage, Forward, Diode 1.14 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.14 V   Voltage, Gate to Source ±16 V  Fuji Semiconductor Voltage, Gate to Source ±16 V  MOSFET Transistors Voltage, Gate to Source ±16 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±16 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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