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2SK3594-01 - 

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 50Milliohms; ID +/-45A; TO-220AB; PD 270W

Fuji Semiconductor 2SK3594-01
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制造商產(chǎn)品編號:
2SK3594-01
倉庫庫存編號:
70212480
技術(shù)數(shù)據(jù)表:
View 2SK3594-01 Datasheet Datasheet
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2SK3594-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA =Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance
  • 2SK3594-01產(chǎn)品信息

      Capacitance, Input  1960 pF @ 75 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±45 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  51 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  270 W  
      Resistance, Drain to Source On  66 mΩ  
      Resistance, Thermal, Junction to Case  0.46300000000000002 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Turn-Off Delay  53 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  25 S  
      Typical Gate Charge @ Vgs  51 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  200 V  
      Voltage, Drain to Source  200 V  
      Voltage, Forward, Diode  1.1 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
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    2SK3594-01相關(guān)搜索

    Capacitance, Input 1960 pF @ 75 V  Fuji Semiconductor Capacitance, Input 1960 pF @ 75 V  MOSFET Transistors Capacitance, Input 1960 pF @ 75 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1960 pF @ 75 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±45 A  Fuji Semiconductor Current, Drain ±45 A  MOSFET Transistors Current, Drain ±45 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±45 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Gate Charge, Total 51 nC  Fuji Semiconductor Gate Charge, Total 51 nC  MOSFET Transistors Gate Charge, Total 51 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 51 nC   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Drain to Source On 66 mΩ  Fuji Semiconductor Resistance, Drain to 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+150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Turn-Off Delay 53 ns  Fuji Semiconductor Time, Turn-Off Delay 53 ns  MOSFET Transistors Time, Turn-Off Delay 53 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 53 ns   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 25 S  Fuji Semiconductor Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 25 S   Typical Gate Charge @ Vgs 51 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 51 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 51 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 51 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  Fuji Semiconductor Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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