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2SK3680-01 - 

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V

Fuji Semiconductor 2SK3680-01
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制造商產(chǎn)品編號(hào):
2SK3680-01
倉(cāng)庫(kù)庫(kù)存編號(hào):
70212465
技術(shù)數(shù)據(jù)表:
View 2SK3680-01 Datasheet Datasheet
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2SK3680-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
  • 2SK3680-01產(chǎn)品信息

      Application  For switching regulators, DC-DC converters, UPS  
      Capacitance, Input  5350 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±52 A  
      Dimensions  15.5 x 5 x 21.5 mm  
      Gate Charge, Total  114 nC  
      Height  0.846" (21.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-247  
      Polarization  N-Channel  
      Power Dissipation  600 W  
      Resistance, Drain to Source On  0.11 Ω  
      Resistance, Thermal, Junction to Case  0.208 °C?W (Max.)  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  50 °C⁄W  
      Time, Turn-Off Delay  190 ns  
      Time, Turn-On Delay  80 ns  
      Transconductance, Forward  30 S  
      Typical Gate Charge @ Vgs  114 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.197" (5mm)  
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    2SK3680-01相關(guān)搜索

    Application For switching regulators, DC-DC converters, UPS  Fuji Semiconductor Application For switching regulators, DC-DC converters, UPS  MOSFET Transistors Application For switching regulators, DC-DC converters, UPS  Fuji Semiconductor MOSFET Transistors Application For switching regulators, DC-DC converters, UPS   Capacitance, Input 5350 pF @ 25 V  Fuji Semiconductor Capacitance, Input 5350 pF @ 25 V  MOSFET Transistors Capacitance, Input 5350 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 5350 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET 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Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-247  Fuji Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  Fuji Semiconductor MOSFET Transistors Package Type TO-247   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET 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Transistors Voltage, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1 V  Fuji Semiconductor Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Fuji Semiconductor MOSFET Transistors Width 0.197" (5mm)  
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