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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRF3805SPBF

IRF3805SPBF -

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20

International Rectifier IRF3805SPBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產品編號：: IRF3805SPBF
倉庫庫存編號：: 70017274
技術數據表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRF3805SPBF產品概述

Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
of other applications.

Features:

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed Up to T_jMax.

Lead-Free

IRF3805SPBF相關搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 7960 pF @ 25 V International Rectifier Capacitance, Input 7960 pF @ 25 V MOSFET Transistors Capacitance, Input 7960 pF @ 25 V International Rectifier MOSFET Transistors Capacitance, Input 7960 pF @ 25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Dual Drain International Rectifier Configuration Dual Drain MOSFET Transistors Configuration Dual Drain International Rectifier MOSFET Transistors Configuration Dual Drain Current, Drain 210 A International Rectifier Current, Drain 210 A MOSFET Transistors Current, Drain 210 A International Rectifier MOSFET Transistors Current, Drain 210 A Dimensions 10.67 x 9.65 x 4.83 mm International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm Gate Charge, Total 190 nC International Rectifier Gate Charge, Total 190 nC MOSFET Transistors Gate Charge, Total 190 nC International Rectifier MOSFET Transistors Gate Charge, Total 190 nC Height 0.19" (4.83mm) International Rectifier Height 0.19" (4.83mm) MOSFET Transistors Height 0.19" (4.83mm) International Rectifier MOSFET Transistors Height 0.19" (4.83mm) Length 0.42" (10.67mm) International Rectifier Length 0.42" (10.67mm) MOSFET Transistors Length 0.42" (10.67mm) International Rectifier MOSFET Transistors Length 0.42" (10.67mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type D2PAK International Rectifier Package Type D2PAK MOSFET Transistors Package Type D2PAK International Rectifier MOSFET Transistors Package Type D2PAK Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 300 W International Rectifier Power Dissipation 300 W MOSFET Transistors Power Dissipation 300 W International Rectifier MOSFET Transistors Power Dissipation 300 W Resistance, Drain to Source On 3.3 mΩ International Rectifier Resistance, Drain to Source On 3.3 mΩ MOSFET Transistors Resistance, Drain to Source On 3.3 mΩ International Rectifier MOSFET Transistors Resistance, Drain to Source On 3.3 mΩ Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 93 ns International Rectifier Time, Turn-Off Delay 93 ns MOSFET Transistors Time, Turn-Off Delay 93 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 93 ns Time, Turn-On Delay 150 ns International Rectifier Time, Turn-On Delay 150 ns MOSFET Transistors Time, Turn-On Delay 150 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 150 ns Transconductance, Forward 75 S International Rectifier Transconductance, Forward 75 S MOSFET Transistors Transconductance, Forward 75 S International Rectifier MOSFET Transistors Transconductance, Forward 75 S Typical Gate Charge @ Vgs 190 nC @ 10 V International Rectifier Typical Gate Charge @ Vgs 190 nC @ 10 V MOSFET Transistors Typical Gate Charge @ Vgs 190 nC @ 10 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 190 nC @ 10 V Voltage, Breakdown, Drain to Source 55 V International Rectifier Voltage, Breakdown, Drain to Source 55 V MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V Voltage, Drain to Source 55 V International Rectifier Voltage, Drain to Source 55 V MOSFET Transistors Voltage, Drain to Source 55 V International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V Voltage, Forward, Diode 1.3 V International Rectifier Voltage, Forward, Diode 1.3 V MOSFET Transistors Voltage, Forward, Diode 1.3 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.38" (9.65mm) International Rectifier Width 0.38" (9.65mm) MOSFET Transistors Width 0.38" (9.65mm) International Rectifier MOSFET Transistors Width 0.38" (9.65mm)

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