Brand/Series |
HEXFET Series |
|
Capacitance, Input |
2780 pF @ -25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Dual Drain |
|
Current, Drain |
-38 A |
|
Dimensions |
10.67 x 9.65 x 4.83 mm |
|
Gate Charge, Total |
150 nC |
|
Height |
0.19" (4.83mm) |
|
Length |
0.42" (10.67mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
D2PAK |
|
Polarization |
P-Channel |
|
Power Dissipation |
170 W |
|
Resistance, Drain to Source On |
60 mΩ |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
72 ns |
|
Time, Turn-On Delay |
14 ns |
|
Transconductance, Forward |
9.5 S |
|
Typical Gate Charge @ Vgs |
150 nC @ -10 V |
|
Voltage, Breakdown, Drain to Source |
-100 V |
|
Voltage, Drain to Source |
-100 V |
|
Voltage, Forward, Diode |
-1.6 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.38" (9.65mm) |
|
關(guān)鍵詞 |