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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRF7105TRPBF

IRF7105TRPBF -

IRF7105TRPBF Dual N/P-channel MOSFET Transistor, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC

International Rectifier IRF7105TRPBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號(hào)：: IRF7105TRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：: 70018873
技術(shù)數(shù)據(jù)表：: Datasheet

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IRF7105TRPBF產(chǎn)品概述

Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

IRF7105TRPBF相關(guān)搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N) International Rectifier Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N) MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N) International Rectifier MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N) Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N, P International Rectifier Channel Type N, P MOSFET Transistors Channel Type N, P International Rectifier MOSFET Transistors Channel Type N, P Configuration Dual Drain International Rectifier Configuration Dual Drain MOSFET Transistors Configuration Dual Drain International Rectifier MOSFET Transistors Configuration Dual Drain Current, Drain -2.3 (P), 3.5 (N) A International Rectifier Current, Drain -2.3 (P), 3.5 (N) A MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A International Rectifier MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A Dimensions 5.00 x 4.00 x 1.50 mm International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm Height 0.059" (1.5mm) International Rectifier Height 0.059" (1.5mm) MOSFET Transistors Height 0.059" (1.5mm) International Rectifier MOSFET Transistors Height 0.059" (1.5mm) Length 0.196" (5mm) International Rectifier Length 0.196" (5mm) MOSFET Transistors Length 0.196" (5mm) International Rectifier MOSFET Transistors Length 0.196" (5mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 2 International Rectifier Number of Elements per Chip 2 MOSFET Transistors Number of Elements per Chip 2 International Rectifier MOSFET Transistors Number of Elements per Chip 2 Number of Pins 8 International Rectifier Number of Pins 8 MOSFET Transistors Number of Pins 8 International Rectifier MOSFET Transistors Number of Pins 8 Package Type SO-8 International Rectifier Package Type SO-8 MOSFET Transistors Package Type SO-8 International Rectifier MOSFET Transistors Package Type SO-8 Power Dissipation 2 W International Rectifier Power Dissipation 2 W MOSFET Transistors Power Dissipation 2 W International Rectifier MOSFET Transistors Power Dissipation 2 W Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω International Rectifier Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω Temperature, Operating, Maximum +150 °C International Rectifier Temperature, Operating, Maximum +150 °C MOSFET Transistors Temperature, Operating, Maximum +150 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +150 °C International Rectifier Temperature, Operating, Range -55 to +150 °C MOSFET Transistors Temperature, Operating, Range -55 to +150 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C Time, Turn-Off Delay 45 ns International Rectifier Time, Turn-Off Delay 45 ns MOSFET Transistors Time, Turn-Off Delay 45 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns Time, Turn-On Delay 12 (P), 7 (N) ns International Rectifier Time, Turn-On Delay 12 (P), 7 (N) ns MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns International Rectifier MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns Transconductance, Forward 3.1 (P), 4.3 (N) sec International Rectifier Transconductance, Forward 3.1 (P), 4.3 (N) sec MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) sec International Rectifier MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) sec Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N) International Rectifier Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N) MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N) International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N) Voltage, Drain to Source -25 (P), 25 (N) V International Rectifier Voltage, Drain to Source -25 (P), 25 (N) V MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V International Rectifier MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V Voltage, Forward, Diode -1.2 (P), 1.2 (N) V International Rectifier Voltage, Forward, Diode -1.2 (P), 1.2 (N) V MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.157" (4mm) International Rectifier Width 0.157" (4mm) MOSFET Transistors Width 0.157" (4mm) International Rectifier MOSFET Transistors Width 0.157" (4mm)

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