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IRF7328TRPBF
IRF7328TRPBF -
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 17 Milliohms; ID -8A; SO-8; PD 2W; gFS 12S
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRF7328TRPBF
倉庫庫存編號:
70017466
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRF7328TRPBF產(chǎn)品概述
HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7328TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
2675 pF @ -25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Source, Quad Drain
Current, Drain
-8 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
52 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
2
Number of Pins
8
Package Type
SO-8
Polarization
Dual P-Channel
Power Dissipation
2 W
Resistance, Drain to Source On
32 mΩ
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
198 ns
Time, Turn-On Delay
13 ns
Transconductance, Forward
12 S
Typical Gate Charge @ Vgs
52 nC @ -10 V
Voltage, Breakdown, Drain to Source
-30 V
Voltage, Drain to Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate to Source
±20 V
Width
0.157" (4mm)
關(guān)鍵詞
IRF7328TRPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
Microchip Technology Inc.
LOW IQ 250MA LDO, VIN 10V MAX, VOUT=5.0V
型號:
MCP1702T-5002E/CB
倉庫庫存編號:
70046126
搜索
IRF7328TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 2675 pF @ -25 V
International Rectifier Capacitance, Input 2675 pF @ -25 V
MOSFET Transistors Capacitance, Input 2675 pF @ -25 V
International Rectifier MOSFET Transistors Capacitance, Input 2675 pF @ -25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Source, Quad Drain
International Rectifier Configuration Dual Source, Quad Drain
MOSFET Transistors Configuration Dual Source, Quad Drain
International Rectifier MOSFET Transistors Configuration Dual Source, Quad Drain
Current, Drain -8 A
International Rectifier Current, Drain -8 A
MOSFET Transistors Current, Drain -8 A
International Rectifier MOSFET Transistors Current, Drain -8 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 52 nC
International Rectifier Gate Charge, Total 52 nC
MOSFET Transistors Gate Charge, Total 52 nC
International Rectifier MOSFET Transistors Gate Charge, Total 52 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 2
International Rectifier Number of Elements per Chip 2
MOSFET Transistors Number of Elements per Chip 2
International Rectifier MOSFET Transistors Number of Elements per Chip 2
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization Dual P-Channel
International Rectifier Polarization Dual P-Channel
MOSFET Transistors Polarization Dual P-Channel
International Rectifier MOSFET Transistors Polarization Dual P-Channel
Power Dissipation 2 W
International Rectifier Power Dissipation 2 W
MOSFET Transistors Power Dissipation 2 W
International Rectifier MOSFET Transistors Power Dissipation 2 W
Resistance, Drain to Source On 32 mΩ
International Rectifier Resistance, Drain to Source On 32 mΩ
MOSFET Transistors Resistance, Drain to Source On 32 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 32 mΩ
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 198 ns
International Rectifier Time, Turn-Off Delay 198 ns
MOSFET Transistors Time, Turn-Off Delay 198 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 198 ns
Time, Turn-On Delay 13 ns
International Rectifier Time, Turn-On Delay 13 ns
MOSFET Transistors Time, Turn-On Delay 13 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 13 ns
Transconductance, Forward 12 S
International Rectifier Transconductance, Forward 12 S
MOSFET Transistors Transconductance, Forward 12 S
International Rectifier MOSFET Transistors Transconductance, Forward 12 S
Typical Gate Charge @ Vgs 52 nC @ -10 V
International Rectifier Typical Gate Charge @ Vgs 52 nC @ -10 V
MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ -10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ -10 V
Voltage, Breakdown, Drain to Source -30 V
International Rectifier Voltage, Breakdown, Drain to Source -30 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V
Voltage, Drain to Source -30 V
International Rectifier Voltage, Drain to Source -30 V
MOSFET Transistors Voltage, Drain to Source -30 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -30 V
Voltage, Forward, Diode -1.2 V
International Rectifier Voltage, Forward, Diode -1.2 V
MOSFET Transistors Voltage, Forward, Diode -1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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