專業(yè)銷售Amphenol(安費諾)全系列產(chǎn)品-英國2號倉庫
關于我們
|
聯(lián)系我們
庫存查詢
Amphenol產(chǎn)品選型
按產(chǎn)品分類選型
按制造商選型
聯(lián)系我們
美國1號分類選型
新加坡2號分類選型
英國10號分類選型
英國2號分類選型
日本5號分類選型
在本站結(jié)果里搜索:
熱門搜索詞:
Connectors
8910DPA43V02
Amphenol
UVZSeries 160VDC
70084122
IM21-14-CDTRI
英國2號倉庫
>
Semiconductors
>
Discrete Semiconductors
>
Transistors & Modules
>
MOSFET Transistors
>
IRF7495PBF
IRF7495PBF -
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
聲明:圖片僅供參考,請以實物為準!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRF7495PBF
倉庫庫存編號:
70017520
技術數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!
IRF7495PBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7495PBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1530 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Quad Drain, Triple Source
Current, Drain
7.3 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
34 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
8
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain to Source On
22 mΩ
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
10 ns
Time, Turn-On Delay
8.7 ns
Transconductance, Forward
11 S
Typical Gate Charge @ Vgs
34 nC @ 10 V
Voltage, Breakdown, Drain to Source
100 V
Voltage, Drain to Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±20 V
Width
0.157" (4mm)
關鍵詞
IRF7495PBF相關搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1530 pF @ 25 V
International Rectifier Capacitance, Input 1530 pF @ 25 V
MOSFET Transistors Capacitance, Input 1530 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 1530 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Quad Drain, Triple Source
International Rectifier Configuration Quad Drain, Triple Source
MOSFET Transistors Configuration Quad Drain, Triple Source
International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source
Current, Drain 7.3 A
International Rectifier Current, Drain 7.3 A
MOSFET Transistors Current, Drain 7.3 A
International Rectifier MOSFET Transistors Current, Drain 7.3 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 34 nC
International Rectifier Gate Charge, Total 34 nC
MOSFET Transistors Gate Charge, Total 34 nC
International Rectifier MOSFET Transistors Gate Charge, Total 34 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2.5 W
International Rectifier Power Dissipation 2.5 W
MOSFET Transistors Power Dissipation 2.5 W
International Rectifier MOSFET Transistors Power Dissipation 2.5 W
Resistance, Drain to Source On 22 mΩ
International Rectifier Resistance, Drain to Source On 22 mΩ
MOSFET Transistors Resistance, Drain to Source On 22 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 22 mΩ
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 10 ns
International Rectifier Time, Turn-Off Delay 10 ns
MOSFET Transistors Time, Turn-Off Delay 10 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 10 ns
Time, Turn-On Delay 8.7 ns
International Rectifier Time, Turn-On Delay 8.7 ns
MOSFET Transistors Time, Turn-On Delay 8.7 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 8.7 ns
Transconductance, Forward 11 S
International Rectifier Transconductance, Forward 11 S
MOSFET Transistors Transconductance, Forward 11 S
International Rectifier MOSFET Transistors Transconductance, Forward 11 S
Typical Gate Charge @ Vgs 34 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 34 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ 10 V
Voltage, Breakdown, Drain to Source 100 V
International Rectifier Voltage, Breakdown, Drain to Source 100 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V
Voltage, Drain to Source 100 V
International Rectifier Voltage, Drain to Source 100 V
MOSFET Transistors Voltage, Drain to Source 100 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機網(wǎng)站:
m.szcwdz.com
美國1號品牌選型
新加坡2號品牌選型
英國2號品牌選型
英國10號品牌選型
日本5號品牌選型
關于我們
|
Amphenol簡介
|
Amphenol產(chǎn)品
|
Amphenol產(chǎn)品應用
|
Amphenol動態(tài)
|
按系列選型
|
按產(chǎn)品規(guī)格選型
|
Amphenol選型手冊
|
付款方式
|
聯(lián)系我們
Copyright © 2017
m.training-know-how.com
All Rights Reserved. 技術支持:
電子元器件
ICP備案證書號:
粵ICP備11103613號