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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRF7832PBF

IRF7832PBF -

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 3.1Milliohms; ID 20A; SO-8; PD 2.5W; VGS +/-20V

International Rectifier IRF7832PBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產品編號：: IRF7832PBF
倉庫庫存編號：: 70017453
技術數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRF7832PBF產品概述

N-Channel Power MOSFET 20A to 29A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRF7832PBF相關搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 4310 pF @ 15 V International Rectifier Capacitance, Input 4310 pF @ 15 V MOSFET Transistors Capacitance, Input 4310 pF @ 15 V International Rectifier MOSFET Transistors Capacitance, Input 4310 pF @ 15 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Quad Drain, Triple Source International Rectifier Configuration Quad Drain, Triple Source MOSFET Transistors Configuration Quad Drain, Triple Source International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source Current, Drain 20 A International Rectifier Current, Drain 20 A MOSFET Transistors Current, Drain 20 A International Rectifier MOSFET Transistors Current, Drain 20 A Dimensions 5.00 x 4.00 x 1.50 mm International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm Gate Charge, Total 34 nC International Rectifier Gate Charge, Total 34 nC MOSFET Transistors Gate Charge, Total 34 nC International Rectifier MOSFET Transistors Gate Charge, Total 34 nC Height 0.059" (1.5mm) International Rectifier Height 0.059" (1.5mm) MOSFET Transistors Height 0.059" (1.5mm) International Rectifier MOSFET Transistors Height 0.059" (1.5mm) Length 0.196" (5mm) International Rectifier Length 0.196" (5mm) MOSFET Transistors Length 0.196" (5mm) International Rectifier MOSFET Transistors Length 0.196" (5mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 8 International Rectifier Number of Pins 8 MOSFET Transistors Number of Pins 8 International Rectifier MOSFET Transistors Number of Pins 8 Package Type SO-8 International Rectifier Package Type SO-8 MOSFET Transistors Package Type SO-8 International Rectifier MOSFET Transistors Package Type SO-8 Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 2.5 W International Rectifier Power Dissipation 2.5 W MOSFET Transistors Power Dissipation 2.5 W International Rectifier MOSFET Transistors Power Dissipation 2.5 W Resistance, Drain to Source On 4.8 mΩ International Rectifier Resistance, Drain to Source On 4.8 mΩ MOSFET Transistors Resistance, Drain to Source On 4.8 mΩ International Rectifier MOSFET Transistors Resistance, Drain to Source On 4.8 mΩ Temperature, Operating, Maximum +155 °C International Rectifier Temperature, Operating, Maximum +155 °C MOSFET Transistors Temperature, Operating, Maximum +155 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +155 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +155 °C International Rectifier Temperature, Operating, Range -55 to +155 °C MOSFET Transistors Temperature, Operating, Range -55 to +155 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +155 °C Time, Turn-Off Delay 21 ns International Rectifier Time, Turn-Off Delay 21 ns MOSFET Transistors Time, Turn-Off Delay 21 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 21 ns Time, Turn-On Delay 12 ns International Rectifier Time, Turn-On Delay 12 ns MOSFET Transistors Time, Turn-On Delay 12 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 12 ns Transconductance, Forward 77 S International Rectifier Transconductance, Forward 77 S MOSFET Transistors Transconductance, Forward 77 S International Rectifier MOSFET Transistors Transconductance, Forward 77 S Typical Gate Charge @ Vgs 34 nC @ 4.5 V International Rectifier Typical Gate Charge @ Vgs 34 nC @ 4.5 V MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ 4.5 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ 4.5 V Voltage, Breakdown, Drain to Source 30 V International Rectifier Voltage, Breakdown, Drain to Source 30 V MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V Voltage, Drain to Source 30 V International Rectifier Voltage, Drain to Source 30 V MOSFET Transistors Voltage, Drain to Source 30 V International Rectifier MOSFET Transistors Voltage, Drain to Source 30 V Voltage, Forward, Diode 1 V International Rectifier Voltage, Forward, Diode 1 V MOSFET Transistors Voltage, Forward, Diode 1 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1 V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.157" (4mm) International Rectifier Width 0.157" (4mm) MOSFET Transistors Width 0.157" (4mm) International Rectifier MOSFET Transistors Width 0.157" (4mm)

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