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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRF9530NSPBF

IRF9530NSPBF -

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ohm; ID -14A; D2Pak; PD 79W; VGS +/-20V; -55

International Rectifier IRF9530NSPBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號：: IRF9530NSPBF
倉庫庫存編號：: 70017012
技術(shù)數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRF9530NSPBF產(chǎn)品概述

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRF9530NSPBF相關(guān)搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 760 pF @ -25 V International Rectifier Capacitance, Input 760 pF @ -25 V MOSFET Transistors Capacitance, Input 760 pF @ -25 V International Rectifier MOSFET Transistors Capacitance, Input 760 pF @ -25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type P International Rectifier Channel Type P MOSFET Transistors Channel Type P International Rectifier MOSFET Transistors Channel Type P Configuration Dual Drain International Rectifier Configuration Dual Drain MOSFET Transistors Configuration Dual Drain International Rectifier MOSFET Transistors Configuration Dual Drain Current, Drain -14 A International Rectifier Current, Drain -14 A MOSFET Transistors Current, Drain -14 A International Rectifier MOSFET Transistors Current, Drain -14 A Dimensions 10.67 x 9.65 x 4.83 mm International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm Gate Charge, Total 58 nC International Rectifier Gate Charge, Total 58 nC MOSFET Transistors Gate Charge, Total 58 nC International Rectifier MOSFET Transistors Gate Charge, Total 58 nC Height 0.19" (4.83mm) International Rectifier Height 0.19" (4.83mm) MOSFET Transistors Height 0.19" (4.83mm) International Rectifier MOSFET Transistors Height 0.19" (4.83mm) Length 0.42" (10.67mm) International Rectifier Length 0.42" (10.67mm) MOSFET Transistors Length 0.42" (10.67mm) International Rectifier MOSFET Transistors Length 0.42" (10.67mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type D2PAK International Rectifier Package Type D2PAK MOSFET Transistors Package Type D2PAK International Rectifier MOSFET Transistors Package Type D2PAK Polarization P-Channel International Rectifier Polarization P-Channel MOSFET Transistors Polarization P-Channel International Rectifier MOSFET Transistors Polarization P-Channel Power Dissipation 79 W International Rectifier Power Dissipation 79 W MOSFET Transistors Power Dissipation 79 W International Rectifier MOSFET Transistors Power Dissipation 79 W Resistance, Drain to Source On 0.2 Ω International Rectifier Resistance, Drain to Source On 0.2 Ω MOSFET Transistors Resistance, Drain to Source On 0.2 Ω International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.2 Ω Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 45 ns International Rectifier Time, Turn-Off Delay 45 ns MOSFET Transistors Time, Turn-Off Delay 45 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns Time, Turn-On Delay 15 ns International Rectifier Time, Turn-On Delay 15 ns MOSFET Transistors Time, Turn-On Delay 15 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 15 ns Transconductance, Forward 3.2 S International Rectifier Transconductance, Forward 3.2 S MOSFET Transistors Transconductance, Forward 3.2 S International Rectifier MOSFET Transistors Transconductance, Forward 3.2 S Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V International Rectifier Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 58 nC @ -10 V Voltage, Breakdown, Drain to Source -100 V International Rectifier Voltage, Breakdown, Drain to Source -100 V MOSFET Transistors Voltage, Breakdown, Drain to Source -100 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -100 V Voltage, Drain to Source -100 V International Rectifier Voltage, Drain to Source -100 V MOSFET Transistors Voltage, Drain to Source -100 V International Rectifier MOSFET Transistors Voltage, Drain to Source -100 V Voltage, Forward, Diode -1.6 V International Rectifier Voltage, Forward, Diode -1.6 V MOSFET Transistors Voltage, Forward, Diode -1.6 V International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.6 V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.38" (9.65mm) International Rectifier Width 0.38" (9.65mm) MOSFET Transistors Width 0.38" (9.65mm) International Rectifier MOSFET Transistors Width 0.38" (9.65mm)

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