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IRFP3415PBF
IRFP3415PBF -
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ohm; ID 43A; TO-247AC; PD 200W; VGS +/-20V
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRFP3415PBF
倉庫庫存編號(hào):
70017601
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRFP3415PBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFP3415PBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
2400 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
43 A
Dimensions
15.87 x 5.31 x 20.70 mm
Gate Charge, Total
200 nC
Height
0.815" (20.7mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain to Source On
0.042 Ω
Resistance, Thermal, Junction to Case
0.75 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +175 °C
Time, Turn-Off Delay
71 ns
Time, Turn-On Delay
12 ns
Transconductance, Forward
19 S
Typical Gate Charge @ Vgs
Maximum of 200 nC @ 10 V
Voltage, Breakdown, Drain to Source
150 V
Voltage, Drain to Source
150 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
± 20 V
Width
0.209" (5.31mm)
關(guān)鍵詞
IRFP3415PBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號(hào) / 倉庫庫存編號(hào)
PDF
操作
Molex Incorporated
.049 pitch picoblade header, smt, ra 3 circuits
型號(hào):
53261-0371
倉庫庫存編號(hào):
70090690
搜索
IRFP3415PBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 2400 pF @ 25 V
International Rectifier Capacitance, Input 2400 pF @ 25 V
MOSFET Transistors Capacitance, Input 2400 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 2400 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 43 A
International Rectifier Current, Drain 43 A
MOSFET Transistors Current, Drain 43 A
International Rectifier MOSFET Transistors Current, Drain 43 A
Dimensions 15.87 x 5.31 x 20.70 mm
International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm
MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm
International Rectifier MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm
Gate Charge, Total 200 nC
International Rectifier Gate Charge, Total 200 nC
MOSFET Transistors Gate Charge, Total 200 nC
International Rectifier MOSFET Transistors Gate Charge, Total 200 nC
Height 0.815" (20.7mm)
International Rectifier Height 0.815" (20.7mm)
MOSFET Transistors Height 0.815" (20.7mm)
International Rectifier MOSFET Transistors Height 0.815" (20.7mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
MOSFET Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier MOSFET Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
MOSFET Transistors Package Type TO-247AC
International Rectifier MOSFET Transistors Package Type TO-247AC
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
MOSFET Transistors Power Dissipation 200 W
International Rectifier MOSFET Transistors Power Dissipation 200 W
Resistance, Drain to Source On 0.042 Ω
International Rectifier Resistance, Drain to Source On 0.042 Ω
MOSFET Transistors Resistance, Drain to Source On 0.042 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.042 Ω
Resistance, Thermal, Junction to Case 0.75 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.75 °C/W
MOSFET Transistors Resistance, Thermal, Junction to Case 0.75 °C/W
International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 0.75 °C/W
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +175 °C
International Rectifier Temperature, Operating, Range -55 to +175 °C
MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C
Time, Turn-Off Delay 71 ns
International Rectifier Time, Turn-Off Delay 71 ns
MOSFET Transistors Time, Turn-Off Delay 71 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 71 ns
Time, Turn-On Delay 12 ns
International Rectifier Time, Turn-On Delay 12 ns
MOSFET Transistors Time, Turn-On Delay 12 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 12 ns
Transconductance, Forward 19 S
International Rectifier Transconductance, Forward 19 S
MOSFET Transistors Transconductance, Forward 19 S
International Rectifier MOSFET Transistors Transconductance, Forward 19 S
Typical Gate Charge @ Vgs Maximum of 200 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 200 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 200 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 200 nC @ 10 V
Voltage, Breakdown, Drain to Source 150 V
International Rectifier Voltage, Breakdown, Drain to Source 150 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V
Voltage, Drain to Source 150 V
International Rectifier Voltage, Drain to Source 150 V
MOSFET Transistors Voltage, Drain to Source 150 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 150 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ± 20 V
International Rectifier Voltage, Gate to Source ± 20 V
MOSFET Transistors Voltage, Gate to Source ± 20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ± 20 V
Width 0.209" (5.31mm)
International Rectifier Width 0.209" (5.31mm)
MOSFET Transistors Width 0.209" (5.31mm)
International Rectifier MOSFET Transistors Width 0.209" (5.31mm)
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sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
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