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IRFZ44VZPBF - 

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 9.6Milliohms; ID 57A; TO-220AB; PD 92W; gFS 25S

International Rectifier IRFZ44VZPBF
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制造商產(chǎn)品編號:
IRFZ44VZPBF
倉庫庫存編號:
70016927
技術數(shù)據(jù)表:
View IRFZ44VZPBF Datasheet Datasheet
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IRFZ44VZPBF產(chǎn)品概述

Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF
  • Advanced process technology
  • Ultra low on-resistance
  • 175 °C operating temperature
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
  • Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature
  • IRFZ44VZPBF產(chǎn)品信息

      Application  For automotive applications  
      Brand/Series  HEXFET Series  
      Capacitance, Input  1690 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  57 A  
      Dimensions  10.66 x 4.82 x 16.51 mm  
      Fall Time  38 ns (Typ.)  
      Gate Charge, Total  43 nC  
      Height  0.65" (16.51mm)  
      Length  0.419" (10.66mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C (Max.)  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  230 W  
      Resistance, Drain to Source On  12 mΩ  
      Resistance, Thermal, Junction to Case  1.64 °C?W (Max.)  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  35 ns  
      Time, Turn-On Delay  14 ns  
      Transconductance, Forward  25 S  
      Typical Gate Charge @ Vgs  43 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.19" (4.82mm)  
    關鍵詞         

    IRFZ44VZPBF相關搜索

    Application For automotive applications  International Rectifier Application For automotive applications  MOSFET Transistors Application For automotive applications  International Rectifier MOSFET Transistors Application For automotive applications   Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 1690 pF @ 25 V  International Rectifier Capacitance, Input 1690 pF @ 25 V  MOSFET Transistors Capacitance, Input 1690 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 1690 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  MOSFET Transistors Configuration Single  International Rectifier MOSFET Transistors Configuration Single   Current, Drain 57 A  International Rectifier Current, Drain 57 A  MOSFET Transistors Current, Drain 57 A  International Rectifier MOSFET Transistors Current, Drain 57 A   Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier Dimensions 10.66 x 4.82 x 16.51 mm  MOSFET Transistors Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier MOSFET Transistors Dimensions 10.66 x 4.82 x 16.51 mm   Fall Time 38 ns (Typ.)  International Rectifier Fall Time 38 ns (Typ.)  MOSFET Transistors Fall Time 38 ns (Typ.)  International Rectifier MOSFET Transistors Fall Time 38 ns (Typ.)   Gate Charge, Total 43 nC  International Rectifier Gate Charge, Total 43 nC  MOSFET Transistors Gate Charge, Total 43 nC  International Rectifier MOSFET Transistors Gate Charge, Total 43 nC   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  MOSFET Transistors Height 0.65" (16.51mm)  International Rectifier MOSFET Transistors Height 0.65" (16.51mm)   Length 0.419" (10.66mm)  International Rectifier Length 0.419" (10.66mm)  MOSFET Transistors Length 0.419" (10.66mm)  International Rectifier MOSFET Transistors Length 0.419" (10.66mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  International Rectifier MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier Operating and Storage Temperature -55 to +175 °C (Max.)  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)  International Rectifier MOSFET Transistors Operating and Storage Temperature -55 to +175 °C (Max.)   Package Type TO-220AB  International Rectifier Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  International Rectifier MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 230 W  International Rectifier Power Dissipation 230 W  MOSFET Transistors Power Dissipation 230 W  International Rectifier MOSFET Transistors Power Dissipation 230 W   Resistance, Drain to Source On 12 mΩ  International Rectifier Resistance, Drain to Source On 12 mΩ  MOSFET Transistors Resistance, Drain to Source On 12 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 12 mΩ   Resistance, Thermal, Junction to Case 1.64 °C?W (Max.)  International Rectifier Resistance, Thermal, Junction to Case 1.64 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 1.64 °C?W (Max.)  International Rectifier MOSFET Transistors Resistance, Thermal, Junction to Case 1.64 °C?W (Max.)   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  International Rectifier MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 35 ns  International Rectifier Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 14 ns  International Rectifier Time, Turn-On Delay 14 ns  MOSFET Transistors Time, Turn-On Delay 14 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 14 ns   Transconductance, Forward 25 S  International Rectifier Transconductance, Forward 25 S  MOSFET Transistors Transconductance, Forward 25 S  International Rectifier MOSFET Transistors Transconductance, Forward 25 S   Typical Gate Charge @ Vgs 43 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 43 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 43 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 43 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  International Rectifier Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  International Rectifier Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.82mm)  International Rectifier Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  International Rectifier MOSFET Transistors Width 0.19" (4.82mm)  
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