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IRG4IBC30WPBF - 

600V WARP 60-150 KHZ DISCRETE IGBT IN ATO-220 FULLPAK PACKAGE

International Rectifier IRG4IBC30WPBF
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制造商產(chǎn)品編號：
IRG4IBC30WPBF
倉庫庫存編號：
70018449
技術(shù)數(shù)據(jù)表：
View IRG4IBC30WPBF Datasheet Datasheet
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IRG4IBC30WPBF產(chǎn)品概述

Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

IRG4IBC30WPBF產(chǎn)品信息

  Capacitance, Gate  980 pF  
  Channel Type  N  
  Configuration  Dual  
  Current, Continuous Collector  17 A  
  Dimensions  10.63 x 4.83 x 14.22 mm  
  Energy Rating  180 mJ  
  Height  0.56" (14.22mm)  
  Length  0.418" (10.63mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-220  
  Power Dissipation  45 W  
  Speed, Switching  30-150 kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Voltage, Collector to Emitter  2.7 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.19" (4.83mm)  
關(guān)鍵詞         

IRG4IBC30WPBF相關(guān)搜索

Capacitance, Gate 980 pF  International Rectifier Capacitance, Gate 980 pF  IGBT Transistors Capacitance, Gate 980 pF  International Rectifier IGBT Transistors Capacitance, Gate 980 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Dual  International Rectifier Configuration Dual  IGBT Transistors Configuration Dual  International Rectifier IGBT Transistors Configuration Dual   Current, Continuous Collector 17 A  International Rectifier Current, Continuous Collector 17 A  IGBT Transistors Current, Continuous Collector 17 A  International Rectifier IGBT Transistors Current, Continuous Collector 17 A   Dimensions 10.63 x 4.83 x 14.22 mm  International Rectifier Dimensions 10.63 x 4.83 x 14.22 mm  IGBT Transistors Dimensions 10.63 x 4.83 x 14.22 mm  International Rectifier IGBT Transistors Dimensions 10.63 x 4.83 x 14.22 mm   Energy Rating 180 mJ  International Rectifier Energy Rating 180 mJ  IGBT Transistors Energy Rating 180 mJ  International Rectifier IGBT Transistors Energy Rating 180 mJ   Height 0.56" (14.22mm)  International Rectifier Height 0.56" (14.22mm)  IGBT Transistors Height 0.56" (14.22mm)  International Rectifier IGBT Transistors Height 0.56" (14.22mm)   Length 0.418" (10.63mm)  International Rectifier Length 0.418" (10.63mm)  IGBT Transistors Length 0.418" (10.63mm)  International Rectifier IGBT Transistors Length 0.418" (10.63mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220  International Rectifier Package Type TO-220  IGBT Transistors Package Type TO-220  International Rectifier IGBT Transistors Package Type TO-220   Power Dissipation 45 W  International Rectifier Power Dissipation 45 W  IGBT Transistors Power Dissipation 45 W  International Rectifier IGBT Transistors Power Dissipation 45 W   Speed, Switching 30-150 kHz  International Rectifier Speed, Switching 30-150 kHz  IGBT Transistors Speed, Switching 30-150 kHz  International Rectifier IGBT Transistors Speed, Switching 30-150 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Voltage, Collector to Emitter 2.7 V  International Rectifier Voltage, Collector to Emitter 2.7 V  IGBT Transistors Voltage, Collector to Emitter 2.7 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.7 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  IGBT Transistors Width 0.19" (4.83mm)  International Rectifier IGBT Transistors Width 0.19" (4.83mm)  
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