Brand/Series |
HEXFET Series |
|
Capacitance, Input |
1870 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
61 A |
|
Dimensions |
6.73 x 2.39 x 6.22 mm |
|
Height |
0.245" (6.22mm) |
|
Length |
0.264" (6.73mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
I-PAK |
|
Power Dissipation |
120 W |
|
Resistance, Drain to Source On |
17 mΩ |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
83 ns |
|
Time, Turn-On Delay |
7.4 ns |
|
Transconductance, Forward |
42 S |
|
Typical Gate Charge @ Vgs |
61 nC @ 10 V |
|
Voltage, Drain to Source |
55 V |
|
Voltage, Forward, Diode |
1.3 V |
|
Voltage, Gate to Source |
± 16 V |
|
Width |
0.094" (2.39mm) |
|
關(guān)鍵詞 |