Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
50 mA |
|
Current, Gain |
20 |
|
Diameter |
5.28 mm |
|
Dimensions |
5.28 Dia. x 4.57 H mm |
|
Frequency, Operating |
600 MHz |
|
Height |
0.18" (4.57mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-106 |
|
Polarity |
NPN |
|
Power Dissipation |
625 mW |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
83.3 °C/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Transistor Type |
NPN |
|
Type |
Amplifier, High Frequency |
|
Voltage, Breakdown, Collector to Emitter |
15 V |
|
Voltage, Collector to Base |
30 V |
|
Voltage, Collector to Emitter |
15 V |
|
Voltage, Collector to Emitter, Saturation |
0.4 V |
|
Voltage, Emitter to Base |
3 V |
|
Voltage, Saturation, Base to Emitter |
1 V |
|
關(guān)鍵詞 |