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NTE128P - 

TRANSISTOR NPN SILICON 100V IC-1A TO-237 AUDIO OUTPUT VIDEO DRIVER

NTE Electronics, Inc. NTE128P
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
NTE128P
倉庫庫存編號(hào):
70214827
技術(shù)數(shù)據(jù)表:
View NTE128P Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE128P產(chǎn)品概述

The NTE128P (NPN) and NTE129P (PNP) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.

Features:
  • High VCE Ratings
  • Exceptional Power Dissipation Capability
  • NTE128P產(chǎn)品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  1 A  
      Current, Gain  100  
      Dimensions  5.08 x 4.57 x 1.27 mm  
      Height  0.18" (4.57mm)  
      Length  0.2" (5.08mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-237  
      Power Dissipation  0.85 W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Transistor Type  NPN  
      Voltage, Collector to Base  100 V  
      Voltage, Collector to Emitter  80 V  
      Voltage, Collector to Emitter, Saturation  0.35 V  
      Voltage, Emitter to Base  5 V  
      Width  0.05" (1.27mm)  
    關(guān)鍵詞         

    NTE128P相關(guān)搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Gain 100  NTE Electronics, Inc. Current, Gain 100  Bipolar Transistors Current, Gain 100  NTE Electronics, Inc. Bipolar Transistors Current, Gain 100   Dimensions 5.08 x 4.57 x 1.27 mm  NTE Electronics, Inc. Dimensions 5.08 x 4.57 x 1.27 mm  Bipolar Transistors Dimensions 5.08 x 4.57 x 1.27 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.08 x 4.57 x 1.27 mm   Height 0.18" (4.57mm)  NTE Electronics, Inc. Height 0.18" (4.57mm)  Bipolar Transistors Height 0.18" (4.57mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.18" (4.57mm)   Length 0.2" (5.08mm)  NTE Electronics, Inc. Length 0.2" (5.08mm)  Bipolar Transistors Length 0.2" (5.08mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.2" (5.08mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-237  NTE Electronics, Inc. Package Type TO-237  Bipolar Transistors Package Type TO-237  NTE Electronics, Inc. Bipolar Transistors Package Type TO-237   Power Dissipation 0.85 W  NTE Electronics, Inc. Power Dissipation 0.85 W  Bipolar Transistors Power Dissipation 0.85 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 0.85 W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 0.35 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.35 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.35 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.35 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.05" (1.27mm)  NTE Electronics, Inc. Width 0.05" (1.27mm)  Bipolar Transistors Width 0.05" (1.27mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.05" (1.27mm)  
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