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NTE129 - 

TRANSISTOR PNP SILICON 80V IC=1A TO-39 AUDIO OUTPUT VIDEO DRIVER

NTE Electronics, Inc. NTE129
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
NTE129
倉庫庫存編號:
70214875
技術(shù)數(shù)據(jù)表:
View NTE129 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

NTE129產(chǎn)品概述

Silicon Complementaryyy Transistors, Audio Output, Video, Driver

NTE129產(chǎn)品信息

  Brand/Series  Transistor Series  
  Complement to  NPN  
  Configuration  Common Base  
  Current, Collector  1 A  
  Current, Continuous Collector  1 A  
  Current, Emitter Cutoff  10 μA  
  Current, Gain  25  
  Device Dissipation  1.25 W  
  Diameter  9.39 mm  
  Dimensions  9.39 Dia. x 6.6 H mm  
  Frequency, Operating  100 to 400 MHz  
  Gain, DC Current, Minimum  25  
  Height  0.26" (6.6mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-39  
  Polarity  PNP  
  Power Dissipation  1.25 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  20 °C/W  
  Temperature Range, Junction, Operating  -65 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  Amplifier, Driver, Switch  
  Voltage, Base to Emitter  5 V  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Base  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  0.5 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  0.9 V  
  Voltage, Saturation, Collector to Emitter  0.15 V  
關(guān)鍵詞         

NTE129相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to NPN  NTE Electronics, Inc. Complement to NPN  Bipolar Transistors Complement to NPN  NTE Electronics, Inc. Bipolar Transistors Complement to NPN   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Continuous Collector 1 A  NTE Electronics, Inc. Current, Continuous Collector 1 A  Bipolar Transistors Current, Continuous Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 1 A   Current, Emitter Cutoff 10 μA  NTE Electronics, Inc. Current, Emitter Cutoff 10 μA  Bipolar Transistors Current, Emitter Cutoff 10 μA  NTE Electronics, Inc. Bipolar Transistors Current, Emitter Cutoff 10 μA   Current, Gain 25  NTE Electronics, Inc. Current, Gain 25  Bipolar Transistors Current, Gain 25  NTE Electronics, Inc. Bipolar Transistors Current, Gain 25   Device Dissipation 1.25 W  NTE Electronics, Inc. Device Dissipation 1.25 W  Bipolar Transistors Device Dissipation 1.25 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 1.25 W   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 100 to 400 MHz  NTE Electronics, Inc. Frequency, Operating 100 to 400 MHz  Bipolar Transistors Frequency, Operating 100 to 400 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 100 to 400 MHz   Gain, DC Current, Minimum 25  NTE Electronics, Inc. Gain, DC Current, Minimum 25  Bipolar Transistors Gain, DC Current, Minimum 25  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 25   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 1.25 W  NTE Electronics, Inc. Power Dissipation 1.25 W  Bipolar Transistors Power Dissipation 1.25 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.25 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 20 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 20 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 20 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 20 °C/W   Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Amplifier, Driver, Switch  NTE Electronics, Inc. Type Amplifier, Driver, Switch  Bipolar Transistors Type Amplifier, Driver, Switch  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Driver, Switch   Voltage, Base to Emitter 5 V  NTE Electronics, Inc. Voltage, Base to Emitter 5 V  Bipolar Transistors Voltage, Base to Emitter 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Base to Emitter 5 V   Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 80 V  NTE Electronics, Inc. Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 0.9 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 0.9 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V   Voltage, Saturation, Collector to Emitter 0.15 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.15 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.15 V  
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