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NTE184 - 

TRANSISTOR NPN SILICON 80V 4AMP TO-126 AUDIO POWER AMP AND SWITCH

NTE Electronics, Inc. NTE184
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制造商產(chǎn)品編號:
NTE184
倉庫庫存編號:
70214920
技術(shù)數(shù)據(jù)表:
View NTE184 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE184產(chǎn)品概述

Silicon Complementary Transistors

NTE184產(chǎn)品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  4 A  
  Current, Continuous Collector  4 A  
  Current, Gain  7  
  Device Dissipation  40 W  
  Dimensions  8.38 x 3.3 x 11.4 mm  
  Frequency, Operating  2 MHz  
  Gain, DC Current, Minimum  7  
  Height  0.449" (11.4mm)  
  Length  0.329" (8.38mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-126  
  Polarity  NPN  
  Power Dissipation  40 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  3.12 °C/W  
  Temperature Range, Junction, Operating  -65 to 150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Base  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  1.4 V  
  Voltage, Emitter to Base  5 V  
  Width  0.13" (3.3mm)  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 4 A  NTE Electronics, Inc. Current, Collector 4 A  Bipolar Transistors Current, Collector 4 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 4 A   Current, Continuous Collector 4 A  NTE Electronics, Inc. Current, Continuous Collector 4 A  Bipolar Transistors Current, Continuous Collector 4 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 4 A   Current, Gain 7  NTE Electronics, Inc. Current, Gain 7  Bipolar Transistors Current, Gain 7  NTE Electronics, Inc. Bipolar Transistors Current, Gain 7   Device Dissipation 40 W  NTE Electronics, Inc. Device Dissipation 40 W  Bipolar Transistors Device Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 40 W   Dimensions 8.38 x 3.3 x 11.4 mm  NTE Electronics, Inc. Dimensions 8.38 x 3.3 x 11.4 mm  Bipolar Transistors Dimensions 8.38 x 3.3 x 11.4 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 8.38 x 3.3 x 11.4 mm   Frequency, Operating 2 MHz  NTE Electronics, Inc. Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 2 MHz   Gain, DC Current, Minimum 7  NTE Electronics, Inc. Gain, DC Current, Minimum 7  Bipolar Transistors Gain, DC Current, Minimum 7  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 7   Height 0.449" (11.4mm)  NTE Electronics, Inc. Height 0.449" (11.4mm)  Bipolar Transistors Height 0.449" (11.4mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.449" (11.4mm)   Length 0.329" (8.38mm)  NTE Electronics, Inc. Length 0.329" (8.38mm)  Bipolar Transistors Length 0.329" (8.38mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.329" (8.38mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-126  NTE Electronics, Inc. Package Type TO-126  Bipolar Transistors Package Type TO-126  NTE Electronics, Inc. Bipolar Transistors Package Type TO-126   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 40 W  NTE Electronics, Inc. Power Dissipation 40 W  Bipolar Transistors Power Dissipation 40 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 40 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.12 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 3.12 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.12 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 3.12 °C/W   Temperature Range, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to 150 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to 150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to 150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 80 V  NTE Electronics, Inc. Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 1.4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.4 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.13" (3.3mm)  NTE Electronics, Inc. Width 0.13" (3.3mm)  Bipolar Transistors Width 0.13" (3.3mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.13" (3.3mm)  
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