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NTE2377 - 

POWER MOSFET N-CHANNEL 900V ID=8A TO-3PCASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2377
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制造商產(chǎn)品編號:
NTE2377
倉庫庫存編號:
70215905
技術(shù)數(shù)據(jù)表:
View NTE2377 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實時在庫數(shù)量,謝謝合作!

NTE2377產(chǎn)品概述

N-Channel Enhancement Mode MOSFET, Drain to Source Breakdown Voltage 900 V, Drain Current 8 A
  • Low on-state resistance
  • Very high-speed switching
  • Converters
    The NTE2377 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.
  • NTE2377產(chǎn)品信息

      Application  Switching mode power supplies, uninterruptible power supplies and motor speed control  
      Brand/Series  MOSFET Series  
      Capacitance, Input  1600 pF @ 20 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  8 A  
      Dimensions  15.62 x 4.82 x 20 mm  
      Fall Time  150 nS  
      Height  0.787" (20mm)  
      Length  0.614" (15.62mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-3P  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  1.6 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  350 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  5 S  
      Voltage, Breakdown, Drain to Source  900 V  
      Voltage, Drain to Source  900 V  
      Voltage, Forward, Diode  1.8 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.19" (4.82mm)  
    關(guān)鍵詞         

    NTE2377相關(guān)搜索

    Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. Application Switching mode power supplies, uninterruptible power supplies and motor speed control  MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control   Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1600 pF @ 20 V  NTE Electronics, Inc. Capacitance, Input 1600 pF @ 20 V  MOSFET Transistors Capacitance, Input 1600 pF @ 20 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1600 pF @ 20 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 8 A  NTE Electronics, Inc. Current, Drain 8 A  MOSFET Transistors Current, Drain 8 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 8 A   Dimensions 15.62 x 4.82 x 20 mm  NTE Electronics, Inc. Dimensions 15.62 x 4.82 x 20 mm  MOSFET Transistors Dimensions 15.62 x 4.82 x 20 mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 15.62 x 4.82 x 20 mm   Fall Time 150 nS  NTE Electronics, Inc. Fall Time 150 nS  MOSFET Transistors Fall Time 150 nS  NTE Electronics, Inc. MOSFET Transistors Fall Time 150 nS   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  MOSFET Transistors Height 0.787" (20mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  MOSFET Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.614" (15.62mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-3P  NTE Electronics, Inc. Package Type TO-3P  MOSFET Transistors Package Type TO-3P  NTE Electronics, Inc. MOSFET Transistors Package Type TO-3P   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 1.6 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 1.6 Ω  MOSFET Transistors Resistance, Drain to Source On 1.6 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 1.6 Ω   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 350 ns  NTE Electronics, Inc. Time, Turn-Off Delay 350 ns  MOSFET Transistors Time, Turn-Off Delay 350 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 350 ns   Time, Turn-On Delay 20 ns  NTE Electronics, Inc. Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 5 S  NTE Electronics, Inc. Transconductance, Forward 5 S  MOSFET Transistors Transconductance, Forward 5 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 5 S   Voltage, Breakdown, Drain to Source 900 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 900 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V   Voltage, Drain to Source 900 V  NTE Electronics, Inc. Voltage, Drain to Source 900 V  MOSFET Transistors Voltage, Drain to Source 900 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 900 V   Voltage, Forward, Diode 1.8 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.8 V  MOSFET Transistors Voltage, Forward, Diode 1.8 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.8 V   Voltage, Gate to Source ±30 V  NTE Electronics, Inc. Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. MOSFET Transistors Width 0.19" (4.82mm)  
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