Brand/Series |
MOSFET Series |
|
Capacitance, Input |
835 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Single |
|
Current, Drain |
10.5 A |
|
Gate Charge, Total |
58 nC |
|
Height |
0.61" (15.49mm) |
|
Length |
0.42" (10.67mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-220 |
|
Polarization |
P-Channel |
|
Power Dissipation |
75 W |
|
Resistance, Drain to Source On |
0.3 Ω |
|
Resistance, Thermal, Junction to Case |
2.5 °C⁄W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
Minimum of 140 ns |
|
Time, Turn-On Delay |
60 ns |
|
Transconductance, Forward |
2 S |
|
Typical Gate Charge @ Vgs |
Maximum of 58 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
100 V |
|
Voltage, Drain to Source |
100 V |
|
Voltage, Forward, Diode |
6.3 V |
|
Voltage, Gate to Source |
±20 V |
|
關(guān)鍵詞 |