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NTE2388 - 

POWER MOSFET N-CHANNEL 200V ID=18A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics, Inc. NTE2388
聲明:圖片僅供參考,請以實物為準(zhǔn)!
制造商產(chǎn)品編號:
NTE2388
倉庫庫存編號:
70216010
技術(shù)數(shù)據(jù)表:
View NTE2388 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

NTE2388產(chǎn)品概述

N Channel Enhancement Mode Switches

NTE2388產(chǎn)品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  1600 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  18 A  
  Gate Charge, Total  38 nC  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarization  N-Channel  
  Power Dissipation  125 W  
  Resistance, Drain to Source On  0.18 Ω  
  Resistance, Thermal, Junction to Case  1 °C⁄W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  80 ns  
  Time, Turn-On Delay  30 ns  
  Transconductance, Forward  6 S  
  Typical Gate Charge @ Vgs  38 nC @ 10 V  
  Voltage, Breakdown, Drain to Source  200 V  
  Voltage, Drain to Source  200 V  
  Voltage, Forward, Diode  1.8 V  
  Voltage, Gate to Source  ±20 V  
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Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1600 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1600 pF @ 25 V  MOSFET Transistors Capacitance, Input 1600 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1600 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 18 A  NTE Electronics, Inc. Current, Drain 18 A  MOSFET Transistors Current, Drain 18 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 18 A   Gate Charge, Total 38 nC  NTE Electronics, Inc. Gate Charge, Total 38 nC  MOSFET Transistors Gate Charge, Total 38 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 38 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 0.18 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.18 Ω  MOSFET Transistors Resistance, Drain to Source On 0.18 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.18 Ω   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 80 ns  NTE Electronics, Inc. Time, Turn-Off Delay 80 ns  MOSFET Transistors Time, Turn-Off Delay 80 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 80 ns   Time, Turn-On Delay 30 ns  NTE Electronics, Inc. Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 6 S  NTE Electronics, Inc. Transconductance, Forward 6 S  MOSFET Transistors Transconductance, Forward 6 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 6 S   Typical Gate Charge @ Vgs 38 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs 38 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 38 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs 38 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  NTE Electronics, Inc. Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 1.8 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.8 V  MOSFET Transistors Voltage, Forward, Diode 1.8 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.8 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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