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NTE261 - 

TRANSISTOR NPN SILICON DARLINGTON 100V IC=5A TO-220 CASE COMP'L TO NTE262

NTE Electronics, Inc. NTE261
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制造商產(chǎn)品編號(hào):
NTE261
倉(cāng)庫(kù)庫(kù)存編號(hào):
70215741
技術(shù)數(shù)據(jù)表:
View NTE261 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

NTE261產(chǎn)品概述

Silicon Complementary Transistors

NTE261產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  5 A  
  Current, Continuous Collector  5 A  
  Current, Gain  1000  
  Current, Output  5 A  
  Device Dissipation  65 W  
  Dimensions  10.67 L x 15.49 H mm  
  Gain, DC Current, Minimum  1000  
  Height  0.61" (15.49mm)  
  Input Voltage  5 V  
  Length  0.42" (10.67mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-220  
  Polarity  NPN  
  Power Dissipation  65 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Ambient  62.5 °C/W  
  Resistance, Thermal, Junction to Case  1.92 °C⁄W  
  Temperature Range, Junction, Operating  -65 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Thermal Resistance, Junction to Ambient  62.5 °C⁄W  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  4 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Output  100 V  
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NTE261相關(guān)搜索

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Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  Bipolar Transistors Package Type TO-220  NTE Electronics, Inc. Bipolar Transistors Package Type TO-220   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 65 W  NTE Electronics, Inc. Power Dissipation 65 W  Bipolar Transistors Power Dissipation 65 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 65 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Ambient 62.5 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Ambient 62.5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Ambient 62.5 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Ambient 62.5 °C/W   Resistance, Thermal, Junction to Case 1.92 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.92 °C⁄W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.92 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1.92 °C⁄W   Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +150 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, 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Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Output 100 V  NTE Electronics, Inc. Voltage, Output 100 V  Bipolar Transistors Voltage, Output 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 100 V  
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