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NTE271 - 

TRANSISTOR PNP SILICON DARLINGTON 100V IC=10A TO-3P CASE COMPLEMENT TO NTE269

NTE Electronics, Inc. NTE271
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制造商產(chǎn)品編號(hào):
NTE271
倉(cāng)庫(kù)庫(kù)存編號(hào):
70214628
技術(shù)數(shù)據(jù)表:
View NTE271 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE271產(chǎn)品概述

Silicon Complementary Transistor
  • Monolithic construction with built-in base-emitter shunt resistors
    The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
  • NTE271產(chǎn)品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  10 A  
      Current, Gain  500  
      Current, Output  10 A  
      Dimensions  15.24 x 4.4 x 13.97 mm  
      Height  0.55" (13.97mm)  
      Input Voltage  5 V  
      Length  0.6" (15.24mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  2  
      Number of Pins  3  
      Package Type  TO-218  
      Polarity  PNP  
      Power Dissipation  125 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Ambient  35.7 °C/W  
      Resistance, Thermal, Junction to Case  1 °C/W  
      Temperature Range, Junction, Operating  -65 to +150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +150 °C  
      Thermal Resistance, Junction to Ambient  35.7 °C/W  
      Transistor Polarity  PNP  
      Transistor Type  PNP  
      Type  Amplifier, Power  
      Voltage, Collector to Base  100 V  
      Voltage, Collector to Emitter  100 V  
      Voltage, Collector to Emitter, Saturation  3 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Output  100 V  
      Voltage, Saturation, Base to Emitter  3.5 V  
      Voltage, Saturation, Collector to Emitter  2 V  
      Voltage, Sustaining, Collector to Emitter  100 V  
      Width  0.173" (4.4mm)  
    關(guān)鍵詞         

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    NTE271相關(guān)搜索

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Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Ambient 35.7 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Ambient 35.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Ambient 35.7 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Ambient 35.7 °C/W   Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +150 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, 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Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to 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Emitter 2 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V   Voltage, Sustaining, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Sustaining, Collector to Emitter 100 V  Bipolar Transistors Voltage, Sustaining, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Sustaining, Collector to Emitter 100 V   Width 0.173" (4.4mm)  NTE Electronics, Inc. Width 0.173" (4.4mm)  Bipolar Transistors Width 0.173" (4.4mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.173" (4.4mm)  
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