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NTE316 - 

TRANSISTOR NPN SILICON 30V IC-0.05A TO-72 CASE LO NOISE HIGH GAIRN SMALL SIGNAL

NTE Electronics, Inc. NTE316
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制造商產(chǎn)品編號(hào):
NTE316
倉(cāng)庫(kù)庫(kù)存編號(hào):
70215891
技術(shù)數(shù)據(jù)表:
View NTE316 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

NTE316產(chǎn)品概述

Silicon NPN Transistor, High Gain, Low Noise Amp, Transistor Polarity

NTE316產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  50 mA  
  Current, Gain  25  
  Device Dissipation  200 mW  
  Diameter  5.58 mm  
  Dimensions  5.58 Dia. x 4.82 H mm  
  Frequency, Operating  1400 MHz  
  Gain, DC Current, Maximum  250 @ VCE == 5V, IC == 2mA, f == 1kHz  
  Gain, DC Current, Minimum  25  
  Height  0.19" (4.82mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  2  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  200 mW  
  Primary Type  Si  
  Temperature Range, Junction, Operating  No value  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  High Power Gain, Low Noise  
  Voltage, Breakdown, Collector to Emitter  15 V  
  Voltage, Collector to Base  30 V  
  Voltage, Collector to Emitter  15 V  
  Voltage, Emitter to Base  3 V  
  Voltage, Saturation, Collector to Emitter  No Value  
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NTE316相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 mA  NTE Electronics, Inc. Current, Collector 50 mA  Bipolar Transistors Current, Collector 50 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 mA   Current, Gain 25  NTE Electronics, Inc. Current, Gain 25  Bipolar Transistors Current, Gain 25  NTE Electronics, Inc. Bipolar Transistors Current, Gain 25   Device Dissipation 200 mW  NTE Electronics, Inc. Device Dissipation 200 mW  Bipolar Transistors Device Dissipation 200 mW  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 200 mW   Diameter 5.58 mm  NTE Electronics, Inc. Diameter 5.58 mm  Bipolar Transistors Diameter 5.58 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 5.58 mm   Dimensions 5.58 Dia. x 4.82 H mm  NTE Electronics, Inc. Dimensions 5.58 Dia. x 4.82 H mm  Bipolar Transistors Dimensions 5.58 Dia. x 4.82 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.58 Dia. x 4.82 H mm   Frequency, Operating 1400 MHz  NTE Electronics, Inc. Frequency, Operating 1400 MHz  Bipolar Transistors Frequency, Operating 1400 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 1400 MHz   Gain, DC Current, Maximum 250 @ VCE == 5V, IC == 2mA, f == 1kHz  NTE Electronics, Inc. Gain, DC Current, Maximum 250 @ VCE == 5V, IC == 2mA, f == 1kHz  Bipolar Transistors Gain, DC Current, Maximum 250 @ VCE == 5V, IC == 2mA, f == 1kHz  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 250 @ VCE == 5V, IC == 2mA, f == 1kHz   Gain, DC Current, Minimum 25  NTE Electronics, Inc. Gain, DC Current, Minimum 25  Bipolar Transistors Gain, DC Current, Minimum 25  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 25   Height 0.19" (4.82mm)  NTE Electronics, Inc. Height 0.19" (4.82mm)  Bipolar Transistors Height 0.19" (4.82mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.19" (4.82mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 2  NTE Electronics, Inc. Number of Pins 2  Bipolar Transistors Number of Pins 2  NTE Electronics, Inc. Bipolar Transistors Number of Pins 2   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  Bipolar Transistors Package Type TO-92  NTE Electronics, Inc. Bipolar Transistors Package Type TO-92   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 200 mW  NTE Electronics, Inc. Power Dissipation 200 mW  Bipolar Transistors Power Dissipation 200 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 200 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating No value  NTE Electronics, Inc. Temperature Range, Junction, Operating No value  Bipolar Transistors Temperature Range, Junction, Operating No value  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating No value   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Power Gain, Low Noise  NTE Electronics, Inc. Type High Power Gain, Low Noise  Bipolar Transistors Type High Power Gain, Low Noise  NTE Electronics, Inc. Bipolar Transistors Type High Power Gain, Low Noise   Voltage, Breakdown, Collector to Emitter 15 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 15 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 15 V   Voltage, Collector to Base 30 V  NTE Electronics, Inc. Voltage, Collector to Base 30 V  Bipolar Transistors Voltage, Collector to Base 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 30 V   Voltage, Collector to Emitter 15 V  NTE Electronics, Inc. Voltage, Collector to Emitter 15 V  Bipolar Transistors Voltage, Collector to Emitter 15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 15 V   Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 3 V   Voltage, Saturation, Collector to Emitter No Value  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter No Value  Bipolar Transistors Voltage, Saturation, Collector to Emitter No Value  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter No Value  
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