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NTE327 - 

TRANSISTOR NPN SILICON 180V IC=25A TO-3CASE POWER AMP AND SWITCH FOR INDUSTRIAL

NTE Electronics, Inc. NTE327
聲明:圖片僅供參考,請以實物為準!
制造商產品編號:
NTE327
倉庫庫存編號:
70214626
技術數據表:
View NTE327 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數據庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數量,謝謝合作!

NTE327產品概述

NPN Transistor, 150 V Collector to Emitter Voltage, 180 V Collector to Base Voltage, TO3 Package
  • High collector-emitter sustaining voltage
  • High DC current gain
  • Low collector-emitter saturation voltage
  • Fast switching times
    Used for industrial amplifier and switching circuit applications.
  • NTE327產品信息

      Bandwidth, Current Gain  40 MHz  
      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  25 A  
      Current, Gain  12  
      Frequency, Operating  40 MHz  
      Gain, DC Current, Maximum  120  
      Gain, DC Current, Minimum  30  
      Height  0.35" (8.89mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3  
      Polarity  NPN  
      Power Dissipation  200 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  0.875 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Type  NPN  
      Type  Amplifier, Power  
      Voltage, Breakdown, Collector to Emitter  150 V  
      Voltage, Collector to Base  180 V  
      Voltage, Collector to Emitter  150 V  
      Voltage, Collector to Emitter, Saturation  1.8 V  
      Voltage, Emitter to Base  6 V  
      Voltage, Saturation, Base to Emitter  2.5 V  
      Voltage, Saturation, Collector to Emitter  1.8 V  
    關鍵詞         

    NTE327相關搜索

    Bandwidth, Current Gain 40 MHz  NTE Electronics, Inc. Bandwidth, Current Gain 40 MHz  Bipolar Transistors Bandwidth, Current Gain 40 MHz  NTE Electronics, Inc. Bipolar Transistors Bandwidth, Current Gain 40 MHz   Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 25 A  NTE Electronics, Inc. Current, Collector 25 A  Bipolar Transistors Current, Collector 25 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 25 A   Current, Gain 12  NTE Electronics, Inc. Current, Gain 12  Bipolar Transistors Current, Gain 12  NTE Electronics, Inc. Bipolar Transistors Current, Gain 12   Frequency, Operating 40 MHz  NTE Electronics, Inc. Frequency, Operating 40 MHz  Bipolar Transistors Frequency, Operating 40 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 40 MHz   Gain, DC Current, Maximum 120  NTE Electronics, Inc. Gain, DC Current, Maximum 120  Bipolar Transistors Gain, DC Current, Maximum 120  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 120   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar 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Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Breakdown, Collector to Emitter 150 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 150 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 150 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 150 V   Voltage, Collector to Base 180 V  NTE Electronics, Inc. Voltage, Collector to Base 180 V  Bipolar Transistors Voltage, Collector to Base 180 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 180 V   Voltage, Collector to Emitter 150 V  NTE Electronics, Inc. Voltage, Collector to Emitter 150 V  Bipolar Transistors Voltage, Collector to Emitter 150 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 150 V   Voltage, Collector to Emitter, Saturation 1.8 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.8 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.5 V   Voltage, Saturation, Collector to Emitter 1.8 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.8 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.8 V  
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