Configuration |
Common Base |
|
Current, Collector |
20 A |
|
Current, Continuous Collector |
20 A |
|
Current, Gain |
30 |
|
Current, Output |
20 A |
|
Device Dissipation |
175 W |
|
Diameter |
22.2 mm |
|
Dimensions |
22.2 Dia. x 8.89 H mm |
|
Gain, DC Current, Maximum |
400 |
|
Gain, DC Current, Minimum |
40 |
|
Height |
0.35" (8.89mm) |
|
Input Voltage |
8 V |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
3 |
|
Package Type |
TO-3 |
|
Polarity |
NPN |
|
Power Dissipation |
175 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Ambient |
1 °C/W |
|
Resistance, Thermal, Junction to Case |
1 °C⁄W |
|
Temperature Range, Junction, Operating |
-65 to 200 °C |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +200 °C |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
High Voltage, Power |
|
Voltage, Breakdown, Collector to Emitter |
500 V |
|
Voltage, Collector to Emitter |
500 V |
|
Voltage, Collector to Emitter, Saturation |
3.5 V |
|
Voltage, Emitter to Base |
8 V |
|
Voltage, Output |
700 V |
|
Voltage, Saturation, Base to Emitter |
2.5 V |
|
關鍵詞 |