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MMBT5087LT1G - 

TRANSISTOR; 300MW DISSIPATION; SOT-23

ON Semiconductor MMBT5087LT1G
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制造商產(chǎn)品編號(hào):
MMBT5087LT1G
倉庫庫存編號(hào):
70099535
技術(shù)數(shù)據(jù)表:
View MMBT5087LT1G Datasheet Datasheet
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MMBT5087LT1G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  -50 mA  
  Current, Gain  250  
  Dimensions  3.04 x 1.40 x 1.01 mm  
  Frequency, Operating  40 MHz  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarity  PNP  
  Power Dissipation  225 mW  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  PNP  
  Type  Low Noise  
  Voltage, Breakdown, Collector to Emitter  -50 V  
  Voltage, Collector to Base  -50 V  
  Voltage, Collector to Emitter  -50 V  
  Voltage, Collector to Emitter, Saturation  -0.3 V  
  Voltage, Emitter to Base  -3 V  
  Voltage, Saturation, Base to Emitter  0.85 V  
  Width  0.055" (1.4mm)  
關(guān)鍵詞         

MMBT5087LT1G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector -50 mA  ON Semiconductor Current, Collector -50 mA  Bipolar Transistors Current, Collector -50 mA  ON Semiconductor Bipolar Transistors Current, Collector -50 mA   Current, Gain 250  ON Semiconductor Current, Gain 250  Bipolar Transistors Current, Gain 250  ON Semiconductor Bipolar Transistors Current, Gain 250   Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.40 x 1.01 mm  Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm   Frequency, Operating 40 MHz  ON Semiconductor Frequency, Operating 40 MHz  Bipolar Transistors Frequency, Operating 40 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 40 MHz   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  Bipolar Transistors Height 0.04" (1.01mm)  ON Semiconductor Bipolar Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  Bipolar Transistors Length 0.119" (3.04mm)  ON Semiconductor Bipolar Transistors Length 0.119" (3.04mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  Bipolar Transistors Package Type SOT-23  ON Semiconductor Bipolar Transistors Package Type SOT-23   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 225 mW  ON Semiconductor Power Dissipation 225 mW  Bipolar Transistors Power Dissipation 225 mW  ON Semiconductor Bipolar Transistors Power Dissipation 225 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Low Noise  ON Semiconductor Type Low Noise  Bipolar Transistors Type Low Noise  ON Semiconductor Bipolar Transistors Type Low Noise   Voltage, Breakdown, Collector to Emitter -50 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter -50 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter -50 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter -50 V   Voltage, Collector to Base -50 V  ON Semiconductor Voltage, Collector to Base -50 V  Bipolar Transistors Voltage, Collector to Base -50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base -50 V   Voltage, Collector to Emitter -50 V  ON Semiconductor Voltage, Collector to Emitter -50 V  Bipolar Transistors Voltage, Collector to Emitter -50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter -50 V   Voltage, Collector to Emitter, Saturation -0.3 V  ON Semiconductor Voltage, Collector to Emitter, Saturation -0.3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.3 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.3 V   Voltage, Emitter to Base -3 V  ON Semiconductor Voltage, Emitter to Base -3 V  Bipolar Transistors Voltage, Emitter to Base -3 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base -3 V   Voltage, Saturation, Base to Emitter 0.85 V  ON Semiconductor Voltage, Saturation, Base to Emitter 0.85 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.85 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.85 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  Bipolar Transistors Width 0.055" (1.4mm)  ON Semiconductor Bipolar Transistors Width 0.055" (1.4mm)  
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