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MPSA29G - 

ON Semi MPSA29G NPN Darlington Transistor, 500 mA 100 V HFE:10000, 3-Pin TO-92

ON Semiconductor MPSA29G
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制造商產(chǎn)品編號(hào):
MPSA29G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100043
技術(shù)數(shù)據(jù)表:
View MPSA29G Datasheet Datasheet
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MPSA29G產(chǎn)品信息

  Configuration  Common Base  
  Current, Collector Cutoff  500 mA  
  Current, Continuous Collector  500 mA  
  Current, Gain  10000  
  Current, Output  500 mA  
  Dimensions  5.20 x 4.19 x 5.33 mm  
  Height  0.21" (5.33mm)  
  Input Voltage  12 V  
  Length  0.204" (5.2mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Ambient  200 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Small Signal  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  1.5 V  
  Voltage, Emitter to Base  12 V  
  Voltage, Output  100 V  
  Width  0.165" (4.19mm)  
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MPSA29G相關(guān)搜索

Configuration Common Base  ON Semiconductor Configuration Common Base  Darlington Transistors Configuration Common Base  ON Semiconductor Darlington Transistors Configuration Common Base   Current, Collector Cutoff 500 mA  ON Semiconductor Current, Collector Cutoff 500 mA  Darlington Transistors Current, Collector Cutoff 500 mA  ON Semiconductor Darlington Transistors Current, Collector Cutoff 500 mA   Current, Continuous Collector 500 mA  ON Semiconductor Current, Continuous Collector 500 mA  Darlington Transistors Current, Continuous Collector 500 mA  ON Semiconductor Darlington Transistors Current, Continuous Collector 500 mA   Current, Gain 10000  ON Semiconductor Current, Gain 10000  Darlington Transistors Current, Gain 10000  ON Semiconductor Darlington Transistors Current, Gain 10000   Current, Output 500 mA  ON Semiconductor Current, Output 500 mA  Darlington Transistors Current, Output 500 mA  ON Semiconductor Darlington Transistors Current, Output 500 mA   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Darlington Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Darlington Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Darlington Transistors Height 0.21" (5.33mm)  ON Semiconductor Darlington Transistors Height 0.21" (5.33mm)   Input Voltage 12 V  ON Semiconductor Input Voltage 12 V  Darlington Transistors Input Voltage 12 V  ON Semiconductor Darlington Transistors Input Voltage 12 V   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Darlington Transistors Length 0.204" (5.2mm)  ON Semiconductor Darlington Transistors Length 0.204" (5.2mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Darlington Transistors Mounting Type Through Hole  ON Semiconductor Darlington Transistors Mounting Type Through Hole   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  Darlington Transistors Number of Elements per Chip 2  ON Semiconductor Darlington Transistors Number of Elements per Chip 2   Number of Pins 3  ON Semiconductor Number of Pins 3  Darlington Transistors Number of Pins 3  ON Semiconductor Darlington Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Darlington Transistors Package Type TO-92  ON Semiconductor Darlington Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Darlington Transistors Polarity NPN  ON Semiconductor Darlington Transistors Polarity NPN   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Darlington Transistors Power Dissipation 625 mW  ON Semiconductor Darlington Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Darlington Transistors Primary Type Si  ON Semiconductor Darlington Transistors Primary Type Si   Resistance, Thermal, Junction to Ambient 200 °C/W  ON Semiconductor Resistance, Thermal, Junction to Ambient 200 °C/W  Darlington Transistors Resistance, Thermal, Junction to Ambient 200 °C/W  ON Semiconductor Darlington Transistors Resistance, Thermal, Junction to Ambient 200 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Darlington Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Darlington Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Darlington Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Darlington Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Darlington Transistors Transistor Type NPN  ON Semiconductor Darlington Transistors Transistor Type NPN   Type Small Signal  ON Semiconductor Type Small Signal  Darlington Transistors Type Small Signal  ON Semiconductor Darlington Transistors Type Small Signal   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Darlington Transistors Voltage, Collector to Base 100 V  ON Semiconductor Darlington Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Darlington Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Darlington Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1.5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.5 V  Darlington Transistors Voltage, Collector to Emitter, Saturation 1.5 V  ON Semiconductor Darlington Transistors Voltage, Collector to Emitter, Saturation 1.5 V   Voltage, Emitter to Base 12 V  ON Semiconductor Voltage, Emitter to Base 12 V  Darlington Transistors Voltage, Emitter to Base 12 V  ON Semiconductor Darlington Transistors Voltage, Emitter to Base 12 V   Voltage, Output 100 V  ON Semiconductor Voltage, Output 100 V  Darlington Transistors Voltage, Output 100 V  ON Semiconductor Darlington Transistors Voltage, Output 100 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Darlington Transistors Width 0.165" (4.19mm)  ON Semiconductor Darlington Transistors Width 0.165" (4.19mm)  
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