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SI2302ADS-T1-E3 - 

MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ohm; ID 2.1A; TO-236 (SOT-23); PD 0.7W

Siliconix / Vishay SI2302ADS-T1-E3
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制造商產(chǎn)品編號(hào):
SI2302ADS-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026064
技術(shù)數(shù)據(jù)表:
View SI2302ADS-T1-E3 Datasheet Datasheet
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SI2302ADS-T1-E3產(chǎn)品概述



Features:
  • Halogen-free Option Available
  • SI2302ADS-T1-E3產(chǎn)品信息

      Brand/Series  SI23 Series  
      Channel Type  N  
      Current, Drain  2.1 A  
      Fall Time  25 ns  
      Gate Charge, Total  4 nC  
      Operating and Storage Temperature  –55 to +150 °C  
      Package Type  TO-236 (SOT-23)  
      Polarization  N-Channel  
      Power Dissipation  0.7 W  
      Resistance, Drain to Source On  0.045 Ohm  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Thermal Resistance, Junction to Ambient  140 °C/W  
      Time, Rise  80 ns  
      Time, Turn-Off Delay  16 ns  
      Time, Turn-On Delay  7 ns  
      Transconductance, Forward  8 S  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  0.76 V  
      Voltage, Gate to Source  ±8 V  
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    SI2302ADS-T1-E3相關(guān)搜索

    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 2.1 A  Siliconix / Vishay Current, Drain 2.1 A  MOSFET Transistors Current, Drain 2.1 A  Siliconix / Vishay MOSFET Transistors Current, Drain 2.1 A   Fall Time 25 ns  Siliconix / Vishay Fall Time 25 ns  MOSFET Transistors Fall Time 25 ns  Siliconix / Vishay MOSFET Transistors Fall Time 25 ns   Gate Charge, Total 4 nC  Siliconix / Vishay Gate Charge, Total 4 nC  MOSFET Transistors Gate Charge, Total 4 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 4 nC   Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type TO-236 (SOT-23)  Siliconix / Vishay Package Type TO-236 (SOT-23)  MOSFET Transistors Package Type TO-236 (SOT-23)  Siliconix / Vishay MOSFET Transistors Package Type TO-236 (SOT-23)   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 0.7 W  Siliconix / Vishay Power Dissipation 0.7 W  MOSFET Transistors Power Dissipation 0.7 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.7 W   Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.045 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.045 Ohm   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 140 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 140 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 140 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 140 °C/W   Time, Rise 80 ns  Siliconix / Vishay Time, Rise 80 ns  MOSFET Transistors Time, Rise 80 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 80 ns   Time, Turn-Off Delay 16 ns  Siliconix / Vishay Time, Turn-Off Delay 16 ns  MOSFET Transistors Time, Turn-Off Delay 16 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 16 ns   Time, Turn-On Delay 7 ns  Siliconix / Vishay Time, Turn-On Delay 7 ns  MOSFET Transistors Time, Turn-On Delay 7 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 7 ns   Transconductance, Forward 8 S  Siliconix / Vishay Transconductance, Forward 8 S  MOSFET Transistors Transconductance, Forward 8 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 8 S   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 0.76 V  Siliconix / Vishay Voltage, Forward, Diode 0.76 V  MOSFET Transistors Voltage, Forward, Diode 0.76 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.76 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V  
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