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SI4488DY-T1-E3/BKN - 

MOSFET; SOIC8 150V N-Channel Trench

Siliconix / Vishay SI4488DY-T1-E3/BKN
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制造商產(chǎn)品編號(hào):
SI4488DY-T1-E3/BKN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026359
技術(shù)數(shù)據(jù)表:
View SI4488DY-T1-E3/BKN Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

SI4488DY-T1-E3/BKN產(chǎn)品概述

Features:
  • Halogen-free According to IEC 61249-2-21Definition
  • TrenchFET® Power MOSFETs
  • Compliant to RoHS Directive 2002/95/EC
  • SI4488DY-T1-E3/BKN產(chǎn)品信息

      Brand/Series  SI44 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  5 A  
      Dimensions  5 x 4 x 1.55 mm  
      Fall Time  15 ns  
      Gate Charge, Total  36 nC  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  SO-8  
      Polarization  Dual N-Channel  
      Power Dissipation  1.4 W  
      Resistance, Drain to Source On  0.5 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Turn-Off Delay  33 ns  
      Time, Turn-On Delay  18 ns  
      Transconductance, Forward  18 S  
      Typical Gate Charge @ Vgs  35 nC @ 75 V  
      Voltage, Breakdown, Drain to Source  150 V  
      Voltage, Drain to Source  150 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
    關(guān)鍵詞         

    SI4488DY-T1-E3/BKN相關(guān)搜索

    Brand/Series SI44 Series  Siliconix / Vishay Brand/Series SI44 Series  MOSFET Transistors Brand/Series SI44 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI44 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 5 A  Siliconix / Vishay Current, Drain 5 A  MOSFET Transistors Current, Drain 5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 5 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Fall Time 15 ns  Siliconix / Vishay Fall Time 15 ns  MOSFET Transistors Fall Time 15 ns  Siliconix / Vishay MOSFET Transistors Fall Time 15 ns   Gate Charge, Total 36 nC  Siliconix / Vishay Gate Charge, Total 36 nC  MOSFET Transistors Gate Charge, Total 36 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 36 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization Dual N-Channel  Siliconix / Vishay Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  Siliconix / Vishay MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 1.4 W  Siliconix / Vishay Power Dissipation 1.4 W  MOSFET Transistors Power Dissipation 1.4 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.4 W   Resistance, Drain to Source On 0.5 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.5 Ω  MOSFET Transistors Resistance, Drain to Source On 0.5 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.5 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Turn-Off Delay 33 ns  Siliconix / Vishay Time, Turn-Off Delay 33 ns  MOSFET Transistors Time, Turn-Off Delay 33 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 33 ns   Time, Turn-On Delay 18 ns  Siliconix / Vishay Time, Turn-On Delay 18 ns  MOSFET Transistors Time, Turn-On Delay 18 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 18 ns   Transconductance, Forward 18 S  Siliconix / Vishay Transconductance, Forward 18 S  MOSFET Transistors Transconductance, Forward 18 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 18 S   Typical Gate Charge @ Vgs 35 nC @ 75 V  Siliconix / Vishay Typical Gate Charge @ Vgs 35 nC @ 75 V  MOSFET Transistors Typical Gate Charge @ Vgs 35 nC @ 75 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 35 nC @ 75 V   Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Drain to Source 150 V  Siliconix / Vishay Voltage, Drain to Source 150 V  MOSFET Transistors Voltage, Drain to Source 150 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 150 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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