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SI7107DN-T1-E3 - 

P-CHANNEL 20-V (D-S) MOSFET

Siliconix / Vishay SI7107DN-T1-E3
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號:
SI7107DN-T1-E3
倉庫庫存編號:
70026263
技術(shù)數(shù)據(jù)表:
View SI7107DN-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認(rèn)好實(shí)時在庫數(shù)量,謝謝合作!

SI7107DN-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI7107DN-T1-E3產(chǎn)品信息

      Brand/Series  SI71 Series  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  -7.8 A  
      Dimensions  3.15 x 3.15 x 1.07 mm  
      Fall Time  240 ns  
      Gate Charge, Total  44 nC  
      Height  0.042" (1.07mm)  
      Length  0.124" (3.15mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Operating and Storage Temperature  –55 to +150 °C  
      Package Type  PowerPAK 1212-8  
      Polarization  P-Channel  
      Power Dissipation  1.5 W  
      Resistance, Drain to Source On  0.02 Ω  
      Resistance, Thermal, Junction to Case  2.4 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  33 °C/W  
      Time, Turn-Off Delay  400 ns  
      Time, Turn-On Delay  40 ns  
      Transconductance, Forward  58 S  
      Typical Gate Charge @ Vgs  34 nC @ -10 V  
      Voltage, Breakdown, Drain to Source  -20 V  
      Voltage, Drain to Source  -20 V  
      Voltage, Forward, Diode  -1.2 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.124" (3.15mm)  
    關(guān)鍵詞         

    SI7107DN-T1-E3相關(guān)搜索

    Brand/Series SI71 Series  Siliconix / Vishay Brand/Series SI71 Series  MOSFET Transistors Brand/Series SI71 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI71 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain -7.8 A  Siliconix / Vishay Current, Drain -7.8 A  MOSFET Transistors Current, Drain -7.8 A  Siliconix / Vishay MOSFET Transistors Current, Drain -7.8 A   Dimensions 3.15 x 3.15 x 1.07 mm  Siliconix / Vishay Dimensions 3.15 x 3.15 x 1.07 mm  MOSFET Transistors Dimensions 3.15 x 3.15 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.15 x 3.15 x 1.07 mm   Fall Time 240 ns  Siliconix / Vishay Fall Time 240 ns  MOSFET Transistors Fall Time 240 ns  Siliconix / Vishay MOSFET Transistors Fall Time 240 ns   Gate Charge, Total 44 nC  Siliconix / Vishay Gate Charge, Total 44 nC  MOSFET Transistors Gate Charge, Total 44 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 44 nC   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.124" (3.15mm)  Siliconix / Vishay Length 0.124" (3.15mm)  MOSFET Transistors Length 0.124" (3.15mm)  Siliconix / Vishay MOSFET Transistors Length 0.124" (3.15mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type PowerPAK 1212-8  Siliconix / Vishay Package Type PowerPAK 1212-8  MOSFET Transistors Package Type PowerPAK 1212-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK 1212-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.5 W  Siliconix / Vishay Power Dissipation 1.5 W  MOSFET Transistors Power Dissipation 1.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.5 W   Resistance, Drain to Source On 0.02 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.02 Ω  MOSFET Transistors Resistance, Drain to Source On 0.02 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.02 Ω   Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 2.4 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 33 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 33 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 33 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 33 °C/W   Time, Turn-Off Delay 400 ns  Siliconix / Vishay Time, Turn-Off Delay 400 ns  MOSFET Transistors Time, Turn-Off Delay 400 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 400 ns   Time, Turn-On Delay 40 ns  Siliconix / Vishay Time, Turn-On Delay 40 ns  MOSFET Transistors Time, Turn-On Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 40 ns   Transconductance, Forward 58 S  Siliconix / Vishay Transconductance, Forward 58 S  MOSFET Transistors Transconductance, Forward 58 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 58 S   Typical Gate Charge @ Vgs 34 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 34 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.124" (3.15mm)  Siliconix / Vishay Width 0.124" (3.15mm)  MOSFET Transistors Width 0.124" (3.15mm)  Siliconix / Vishay MOSFET Transistors Width 0.124" (3.15mm)  
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