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SI9407AEY-T1-E3 - 

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ohm; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF

Siliconix / Vishay SI9407AEY-T1-E3
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制造商產(chǎn)品編號:
SI9407AEY-T1-E3
倉庫庫存編號:
70026076
技術(shù)數(shù)據(jù)表:
View SI9407AEY-T1-E3 Datasheet Datasheet
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SI9407AEY-T1-E3產(chǎn)品信息

  Brand/Series  SI94 Series  
  Channel Type  P  
  Current, Drain  ±3.5 A  
  Gate Charge, Total  30 nC  
  Package Type  SO-8  
  Polarization  P-Channel  
  Power Dissipation  3 W  
  Resistance, Drain to Source On  0.15 Ohm  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Time, Turn-Off Delay  35 ns  
  Time, Turn-On Delay  8 ns  
  Transconductance, Forward  8 S  
  Voltage, Breakdown, Drain to Source  -60 V  
  Voltage, Drain to Source  –60 V  
  Voltage, Forward, Diode  -1.2 V  
  Voltage, Gate to Source  ±20 V  
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SI9407AEY-T1-E3相關(guān)搜索

Brand/Series SI94 Series  Siliconix / Vishay Brand/Series SI94 Series  MOSFET Transistors Brand/Series SI94 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI94 Series   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Current, Drain ±3.5 A  Siliconix / Vishay Current, Drain ±3.5 A  MOSFET Transistors Current, Drain ±3.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain ±3.5 A   Gate Charge, Total 30 nC  Siliconix / Vishay Gate Charge, Total 30 nC  MOSFET Transistors Gate Charge, Total 30 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 30 nC   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 3 W  Siliconix / Vishay Power Dissipation 3 W  MOSFET Transistors Power Dissipation 3 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 3 W   Resistance, Drain to Source On 0.15 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.15 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.15 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.15 Ohm   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 35 ns  Siliconix / Vishay Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 8 ns  Siliconix / Vishay Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 8 S  Siliconix / Vishay Transconductance, Forward 8 S  MOSFET Transistors Transconductance, Forward 8 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 8 S   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source –60 V  Siliconix / Vishay Voltage, Drain to Source –60 V  MOSFET Transistors Voltage, Drain to Source –60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source –60 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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