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SIR422DP-T1-GE3 - 

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0054Ohm; ID 20A; PowerPak SO-8; -55de

Siliconix / Vishay SIR422DP-T1-GE3
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SIR422DP-T1-GE3
倉庫庫存編號:
70026400
技術(shù)數(shù)據(jù)表:
View SIR422DP-T1-GE3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SIR422DP-T1-GE3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SIR422DP-T1-GE3產(chǎn)品信息

      Brand/Series  TrenchFET Series  
      Capacitance, Input  1785 pF @ 20 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  40 A  
      Dimensions  5.99 x 5 x 1.07 mm  
      Height  0.042" (1.07mm)  
      Length  0.235" (5.99mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Package Type  PowerPAK-SO-8  
      Power Dissipation  34.7 W  
      Resistance, Drain to Source On  0.008 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  28 ns  
      Time, Turn-On Delay  19 ns  
      Transconductance, Forward  70 S  
      Typical Gate Charge @ Vgs  32 nC @ 10 V  
      Voltage, Drain to Source  40 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.197" (5mm)  
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    SIR422DP-T1-GE3相關(guān)搜索

    Brand/Series TrenchFET Series  Siliconix / Vishay Brand/Series TrenchFET Series  MOSFET Transistors Brand/Series TrenchFET Series  Siliconix / Vishay MOSFET Transistors Brand/Series TrenchFET Series   Capacitance, Input 1785 pF @ 20 V  Siliconix / Vishay Capacitance, Input 1785 pF @ 20 V  MOSFET Transistors Capacitance, Input 1785 pF @ 20 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 1785 pF @ 20 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 40 A  Siliconix / Vishay Current, Drain 40 A  MOSFET Transistors Current, Drain 40 A  Siliconix / Vishay MOSFET Transistors Current, Drain 40 A   Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay Dimensions 5.99 x 5 x 1.07 mm  MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.235" (5.99mm)  Siliconix / Vishay Length 0.235" (5.99mm)  MOSFET Transistors Length 0.235" (5.99mm)  Siliconix / Vishay MOSFET Transistors Length 0.235" (5.99mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type PowerPAK-SO-8  Siliconix / Vishay Package Type PowerPAK-SO-8  MOSFET Transistors Package Type PowerPAK-SO-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK-SO-8   Power Dissipation 34.7 W  Siliconix / Vishay Power Dissipation 34.7 W  MOSFET Transistors Power Dissipation 34.7 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 34.7 W   Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.008 Ω  MOSFET Transistors Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.008 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 28 ns  Siliconix / Vishay Time, Turn-Off Delay 28 ns  MOSFET Transistors Time, Turn-Off Delay 28 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 28 ns   Time, Turn-On Delay 19 ns  Siliconix / Vishay Time, Turn-On Delay 19 ns  MOSFET Transistors Time, Turn-On Delay 19 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 19 ns   Transconductance, Forward 70 S  Siliconix / Vishay Transconductance, Forward 70 S  MOSFET Transistors Transconductance, Forward 70 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 70 S   Typical Gate Charge @ Vgs 32 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 32 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 32 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 32 nC @ 10 V   Voltage, Drain to Source 40 V  Siliconix / Vishay Voltage, Drain to Source 40 V  MOSFET Transistors Voltage, Drain to Source 40 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 40 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.197" (5mm)  Siliconix / Vishay Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Siliconix / Vishay MOSFET Transistors Width 0.197" (5mm)  
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