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SUP60N06-18-E3 - 

MOSFET; TO220 NCH MOS 60V .018R

Siliconix / Vishay SUP60N06-18-E3
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SUP60N06-18-E3
倉庫庫存編號:
70026397
技術(shù)數(shù)據(jù)表:
View SUP60N06-18-E3 Datasheet Datasheet
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SUP60N06-18-E3產(chǎn)品概述



Features:
  • 175°C Rated (Max. Junction Temperature)
  • TrenchFET® Power MOSFETs
  • SUP60N06-18-E3產(chǎn)品信息

      Brand/Series  SUP Series  
      Channel Type  N  
      Current, Drain  60 A  
      Fall Time  30 ns  
      Gate Charge, Total  60 nC  
      Operating and Storage Temperature  –55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  120 W  
      Resistance, Drain to Source On  0.018 Ohm  
      Resistance, Thermal, Junction to Case  1.25 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  –55 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Rise  30 ns  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  30 ns  
      Transconductance, Forward  49 S  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Forward, Diode  1.6 V  
      Voltage, Gate to Source  ±20 V  
    關(guān)鍵詞         

    SUP60N06-18-E3相關(guān)搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 60 A  Siliconix / Vishay Current, Drain 60 A  MOSFET Transistors Current, Drain 60 A  Siliconix / Vishay MOSFET Transistors Current, Drain 60 A   Fall Time 30 ns  Siliconix / Vishay Fall Time 30 ns  MOSFET Transistors Fall Time 30 ns  Siliconix / Vishay MOSFET Transistors Fall Time 30 ns   Gate Charge, Total 60 nC  Siliconix / Vishay Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 60 nC   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 120 W  Siliconix / Vishay Power Dissipation 120 W  MOSFET Transistors Power Dissipation 120 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 120 W   Resistance, Drain to Source On 0.018 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.018 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.018 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.018 Ohm   Resistance, Thermal, Junction to Case 1.25 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 1.25 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.25 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 1.25 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Rise 30 ns  Siliconix / Vishay Time, Rise 30 ns  MOSFET Transistors Time, Rise 30 ns  Siliconix / Vishay MOSFET Transistors Time, Rise 30 ns   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 30 ns  Siliconix / Vishay Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 49 S  Siliconix / Vishay Transconductance, Forward 49 S  MOSFET Transistors Transconductance, Forward 49 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 49 S   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Forward, Diode 1.6 V  Siliconix / Vishay Voltage, Forward, Diode 1.6 V  MOSFET Transistors Voltage, Forward, Diode 1.6 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.6 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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