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SUP75N06-08-E3 - 

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.007Ohm; ID 75A; TO-220AB; PD 250W; VGS +/-20V

Siliconix / Vishay SUP75N06-08-E3
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制造商產(chǎn)品編號(hào):
SUP75N06-08-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026080
技術(shù)數(shù)據(jù)表:
View SUP75N06-08-E3 Datasheet Datasheet
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SUP75N06-08-E3產(chǎn)品信息

  Brand/Series  SUP Series  
  Channel Type  N  
  Current, Drain  75 A  
  Gate Charge, Total  85 nC  
  Package Type  TO-220AB  
  Polarization  N-Channel  
  Power Dissipation  250 W  
  Resistance, Drain to Source On  0.007 Ohm  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  –55 °C  
  Time, Turn-Off Delay  65 ns  
  Time, Turn-On Delay  20 ns  
  Transconductance, Forward  30 S  
  Voltage, Breakdown, Drain to Source  60 V  
  Voltage, Forward, Diode  1 V  
  Voltage, Gate to Source  ±20 V  
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SUP75N06-08-E3相關(guān)搜索

Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Current, Drain 75 A  Siliconix / Vishay Current, Drain 75 A  MOSFET Transistors Current, Drain 75 A  Siliconix / Vishay MOSFET Transistors Current, Drain 75 A   Gate Charge, Total 85 nC  Siliconix / Vishay Gate Charge, Total 85 nC  MOSFET Transistors Gate Charge, Total 85 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 85 nC   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 250 W  Siliconix / Vishay Power Dissipation 250 W  MOSFET Transistors Power Dissipation 250 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 W   Resistance, Drain to Source On 0.007 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.007 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.007 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.007 Ohm   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum –55 °C  Siliconix / Vishay Temperature, Operating, Minimum –55 °C  MOSFET Transistors Temperature, Operating, Minimum –55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum –55 °C   Time, Turn-Off Delay 65 ns  Siliconix / Vishay Time, Turn-Off Delay 65 ns  MOSFET Transistors Time, Turn-Off Delay 65 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 65 ns   Time, Turn-On Delay 20 ns  Siliconix / Vishay Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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