VBT2045BP-E3/4W -

Semiconductor, Rectifier; Trench MOS Barrier Schottky, Single; 45V; 20A; TO-263AB

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Features:

Trench MOS Schottky Technology

Low Forward Voltage Drop, Low Power Losses

High Efficiency Operation

Meets MSL Level 1, Per J-STD-020, LF Maximum Peak of 245°C

Compliant to RoHS Directive 2011/65/EU
1 Definition

Applications:

For Use in Solar Cell Junction Box as a Bypass Diode for Protection, Using DC Forward Current without Reverse Bias

Brand/Series	TMBS Series
Configuration	Single
Current, Forward, Continuous	20 A
Current, On-State, Non-Repetitive Peak	160 A
Current, Peak	2000 μA
Current, Reverse	2000 μA
Current, Surge	160 A
Dimensions	10.45 x 4.83 x 9.14 mm
Diode Type	Schottky
Height	0.36" (9.14mm)
Length	0.411" (10.45mm)
Mounting Type	Through Hole
Number of Pins	2
Package Type	TO-263AB
Primary Type	Rectifier
Resistance, Thermal, Junction to Case	1.5 °C/W
Temperature, Operating	-40 TO 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +150 °C
Voltage, Forward	0.66 V
Voltage, Repetitive Peak	45 V
Width	0.19" (4.83mm)
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