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SK 200 GD 066 T
SK 200 GD 066 T -
IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS
聲明:圖片僅供參考,請以實物為準!
制造商:
SEMIKRON
SEMIKRON
制造商產(chǎn)品編號:
SK 200 GD 066 T
倉庫庫存編號:
70098370
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!
SK 200 GD 066 T產(chǎn)品概述
Features:
NewTrench
4
IGBT Chips
High Powercycling Capability
Rugged Solder Pin (30 A)
SK 200 GD 066 T產(chǎn)品信息
Brand/Series
IGBT Series
Capacitance, Gate
12.2 nF
Channel Type
N
Configuration
Array
Current, Collector
174 A
Current, Continuous Collector
174 A
Dimensions
55 x 60.25 x 12 mm
Energy Rating
25.9 mJ
Height
0.472" (12mm)
Mounting Type
Through Hole
Number of Pins
22
Package Type
GD-T
Polarity
N-Channel
Primary Type
Si
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Range
-40 to +175 °C
Transistor Type
IGBT
Type
Trench
Voltage, Collector to Emitter
600 V
Voltage, Collector to Emitter Shorted
600 V
Voltage, Gate to Emitter
±20 V
Width
2.372" (60.25mm)
關(guān)鍵詞
SK 200 GD 066 T相關(guān)搜索
Brand/Series IGBT Series
SEMIKRON Brand/Series IGBT Series
IGBT Transistor Modules Brand/Series IGBT Series
SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series
Capacitance, Gate 12.2 nF
SEMIKRON Capacitance, Gate 12.2 nF
IGBT Transistor Modules Capacitance, Gate 12.2 nF
SEMIKRON IGBT Transistor Modules Capacitance, Gate 12.2 nF
Channel Type N
SEMIKRON Channel Type N
IGBT Transistor Modules Channel Type N
SEMIKRON IGBT Transistor Modules Channel Type N
Configuration Array
SEMIKRON Configuration Array
IGBT Transistor Modules Configuration Array
SEMIKRON IGBT Transistor Modules Configuration Array
Current, Collector 174 A
SEMIKRON Current, Collector 174 A
IGBT Transistor Modules Current, Collector 174 A
SEMIKRON IGBT Transistor Modules Current, Collector 174 A
Current, Continuous Collector 174 A
SEMIKRON Current, Continuous Collector 174 A
IGBT Transistor Modules Current, Continuous Collector 174 A
SEMIKRON IGBT Transistor Modules Current, Continuous Collector 174 A
Dimensions 55 x 60.25 x 12 mm
SEMIKRON Dimensions 55 x 60.25 x 12 mm
IGBT Transistor Modules Dimensions 55 x 60.25 x 12 mm
SEMIKRON IGBT Transistor Modules Dimensions 55 x 60.25 x 12 mm
Energy Rating 25.9 mJ
SEMIKRON Energy Rating 25.9 mJ
IGBT Transistor Modules Energy Rating 25.9 mJ
SEMIKRON IGBT Transistor Modules Energy Rating 25.9 mJ
Height 0.472" (12mm)
SEMIKRON Height 0.472" (12mm)
IGBT Transistor Modules Height 0.472" (12mm)
SEMIKRON IGBT Transistor Modules Height 0.472" (12mm)
Mounting Type Through Hole
SEMIKRON Mounting Type Through Hole
IGBT Transistor Modules Mounting Type Through Hole
SEMIKRON IGBT Transistor Modules Mounting Type Through Hole
Number of Pins 22
SEMIKRON Number of Pins 22
IGBT Transistor Modules Number of Pins 22
SEMIKRON IGBT Transistor Modules Number of Pins 22
Package Type GD-T
SEMIKRON Package Type GD-T
IGBT Transistor Modules Package Type GD-T
SEMIKRON IGBT Transistor Modules Package Type GD-T
Polarity N-Channel
SEMIKRON Polarity N-Channel
IGBT Transistor Modules Polarity N-Channel
SEMIKRON IGBT Transistor Modules Polarity N-Channel
Primary Type Si
SEMIKRON Primary Type Si
IGBT Transistor Modules Primary Type Si
SEMIKRON IGBT Transistor Modules Primary Type Si
Temperature, Operating, Maximum +175 °C
SEMIKRON Temperature, Operating, Maximum +175 °C
IGBT Transistor Modules Temperature, Operating, Maximum +175 °C
SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +175 °C
Temperature, Operating, Range -40 to +175 °C
SEMIKRON Temperature, Operating, Range -40 to +175 °C
IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C
SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C
Transistor Type IGBT
SEMIKRON Transistor Type IGBT
IGBT Transistor Modules Transistor Type IGBT
SEMIKRON IGBT Transistor Modules Transistor Type IGBT
Type Trench
SEMIKRON Type Trench
IGBT Transistor Modules Type Trench
SEMIKRON IGBT Transistor Modules Type Trench
Voltage, Collector to Emitter 600 V
SEMIKRON Voltage, Collector to Emitter 600 V
IGBT Transistor Modules Voltage, Collector to Emitter 600 V
SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 600 V
Voltage, Collector to Emitter Shorted 600 V
SEMIKRON Voltage, Collector to Emitter Shorted 600 V
IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V
SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V
Voltage, Gate to Emitter ±20 V
SEMIKRON Voltage, Gate to Emitter ±20 V
IGBT Transistor Modules Voltage, Gate to Emitter ±20 V
SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V
Width 2.372" (60.25mm)
SEMIKRON Width 2.372" (60.25mm)
IGBT Transistor Modules Width 2.372" (60.25mm)
SEMIKRON IGBT Transistor Modules Width 2.372" (60.25mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機網(wǎng)站:
m.szcwdz.com
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