Brand/Series |
IGBT Series |
|
Capacitance, Gate |
5 nF |
|
Channel Type |
N |
|
Configuration |
Dual |
|
Current, Collector |
100 A |
|
Current, Continuous Collector |
100 A |
|
Dimensions |
94.5 x 34.5 x 28.8 mm |
|
Energy Rating |
12.5 mJ |
|
Height |
1.134" (28.8mm) |
|
Inductance, Collector to Emitter |
20 nH |
|
Length |
3.72" (94.5mm) |
|
Mounting Type |
Screw |
|
Number of Pins |
7 |
|
Package Type |
D 93 |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Resistance, Thermal |
0.05 K?W (Max.) |
|
Resistance, Thermal, Junction to Case |
0.18 K/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +150 °C |
|
Transistor Type |
IGBT |
|
Type |
Ultrafast |
|
Voltage, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter Shorted |
1200 V |
|
Voltage, Gate to Emitter |
±20 V |
|
Voltage, Gate to Emitter Threshold |
5.5 V (Typ.) |
|
Width |
1.358" (34.5mm) |
|
關(guān)鍵詞 |