amphenol代理商
專業(yè)銷售Amphenol(安費(fèi)諾)全系列產(chǎn)品-英國(guó)2號(hào)倉(cāng)庫(kù)
美國(guó)1號(hào)分類選型新加坡2號(hào)分類選型英國(guó)10號(hào)分類選型英國(guó)2號(hào)分類選型日本5號(hào)分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

SKM100GB125DN - 

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

SEMIKRON SKM100GB125DN
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
SKM100GB125DN
倉(cāng)庫(kù)庫(kù)存編號(hào):
70098293
技術(shù)數(shù)據(jù)表:
View SKM100GB125DN Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

SKM100GB125DN產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  5 nF  
  Channel Type  N  
  Configuration  Dual  
  Current, Collector  100 A  
  Current, Continuous Collector  100 A  
  Dimensions  94.5 x 34.5 x 28.8 mm  
  Energy Rating  12.5 mJ  
  Height  1.134" (28.8mm)  
  Inductance, Collector to Emitter  20 nH  
  Length  3.72" (94.5mm)  
  Mounting Type  Screw  
  Number of Pins  7  
  Package Type  D 93  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal  0.05 K?W (Max.)  
  Resistance, Thermal, Junction to Case  0.18 K/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Transistor Type  IGBT  
  Type  Ultrafast  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate to Emitter  ±20 V  
  Voltage, Gate to Emitter Threshold  5.5 V (Typ.)  
  Width  1.358" (34.5mm)  
關(guān)鍵詞         

SKM100GB125DN相關(guān)搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 5 nF  SEMIKRON Capacitance, Gate 5 nF  IGBT Transistor Modules Capacitance, Gate 5 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 5 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 100 A  SEMIKRON Current, Collector 100 A  IGBT Transistor Modules Current, Collector 100 A  SEMIKRON IGBT Transistor Modules Current, Collector 100 A   Current, Continuous Collector 100 A  SEMIKRON Current, Continuous Collector 100 A  IGBT Transistor Modules Current, Continuous Collector 100 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 100 A   Dimensions 94.5 x 34.5 x 28.8 mm  SEMIKRON Dimensions 94.5 x 34.5 x 28.8 mm  IGBT Transistor Modules Dimensions 94.5 x 34.5 x 28.8 mm  SEMIKRON IGBT Transistor Modules Dimensions 94.5 x 34.5 x 28.8 mm   Energy Rating 12.5 mJ  SEMIKRON Energy Rating 12.5 mJ  IGBT Transistor Modules Energy Rating 12.5 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 12.5 mJ   Height 1.134" (28.8mm)  SEMIKRON Height 1.134" (28.8mm)  IGBT Transistor Modules Height 1.134" (28.8mm)  SEMIKRON IGBT Transistor Modules Height 1.134" (28.8mm)   Inductance, Collector to Emitter 20 nH  SEMIKRON Inductance, Collector to Emitter 20 nH  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH   Length 3.72" (94.5mm)  SEMIKRON Length 3.72" (94.5mm)  IGBT Transistor Modules Length 3.72" (94.5mm)  SEMIKRON IGBT Transistor Modules Length 3.72" (94.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 93  SEMIKRON Package Type D 93  IGBT Transistor Modules Package Type D 93  SEMIKRON IGBT Transistor Modules Package Type D 93   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal 0.05 K?W (Max.)  SEMIKRON Resistance, Thermal 0.05 K?W (Max.)  IGBT Transistor Modules Resistance, Thermal 0.05 K?W (Max.)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.05 K?W (Max.)   Resistance, Thermal, Junction to Case 0.18 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.18 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.18 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.18 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)   Width 1.358" (34.5mm)  SEMIKRON Width 1.358" (34.5mm)  IGBT Transistor Modules Width 1.358" (34.5mm)  SEMIKRON IGBT Transistor Modules Width 1.358" (34.5mm)  
電話:400-900-3095
QQ:800152669
關(guān)于我們 | Amphenol簡(jiǎn)介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動(dòng)態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊(cè) | 付款方式 | 聯(lián)系我們
Copyright © 2017 m.training-know-how.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號(hào):粵ICP備11103613號(hào)