1N1189 -

DIODE; 35 A (MAX.) IF; 1.7 V (MAX.); 500V; 1C/W; 480A IFMS; 10A IR; DO-203AB

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Features:

Low Leakage Current Series

Good Surge Current Capability Up to 1000 A

Can Be Supplied to Meet Stringent Military, Aerospace and Other High Reliability Requirements

RoHS Compliant

Brand/Series	1N1189 Series
Configuration	Common Cathode
Current Squared Time Rating	1140 A²s
Current, Forward, Continuous	35 A
Current, On-State, Non-Repetitive Peak	570 A @ 50 Hz, 595 A @ 60 Hz
Current, Peak	10 mA
Current, Reverse	10 mA
Current, Surge	500 A
Diode Type	Silicon Rectifier
Height	1.453" (36.9mm)
Mounting Type	Stud
Package Type	DO-203AB
Primary Type	Rectifier
Resistance, Thermal, Junction to Case	1 °C/W
Temperature, Junction, Maximum	+200 °C
Temperature, Operating	-65 to +190 °C
Temperature, Operating, Maximum	+190 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +190 °C
Voltage, Forward	1.7 V
Voltage, Repetitive Peak	500 V
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